Skip to content
VuFind
  • Login
    • English
    • Deutsch
    • Español
    • Français
    • Italiano
Advanced
  • Cite this
  • Text this
  • Email this
  • Print
  • Export Record
    • Export to RefWorks
    • Export to EndNoteWeb
    • Export to EndNote
  • Save to List
  • Permanent link
Cover Image

Saved in:
Bibliographic Details
Main Authors: Hamid, Md Abdul, Das, Nabasindhu, Gilankar, Advait, Lenzen, Brad, Smith, David J., Kalarickal, Nidhin Kurian
Format: Preprint
Published: 2026
Subjects:
Applied Physics
Materials Science
Online Access:https://arxiv.org/abs/2604.05106
Tags: Add Tag
No Tags, Be the first to tag this record!
  • Holdings
  • Description
  • Table of Contents
  • Comments
  • Similar Items
  • Staff View

Internet

https://arxiv.org/abs/2604.05106

Similar Items

  • >3kV NiO/Ga2O3 Heterojunction Diodes with Space-Modulated Junction Termination Extension and Sub-1V Turn-on
    by: Gilankar, Advait, et al.
    Published: (2024)
  • Demonstration of KV-Class \b{eta}-Ga2O3 Trench Junction Barrier Schottky Diodes with SpaceModulated Junction Termination Extension
    by: Gilankar, Advait, et al.
    Published: (2025)
  • In-situ Patterned Damage-Free Etching of 3-Dimensional Structures in \b{eta}-Ga2O3 using Triethylgallium
    by: Das, Nabasindhu, et al.
    Published: (2024)
  • Ultrawide Bandgap Lateral AlN Schottky Barrier Diodes With Graded AlGaN Contact Layer on Single‐Crystal AlN Substrate
    by: Junzhe Xie, et al.
    Published: (2025)
  • Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor
    by: Mudiyanselage, Dinusha Herath, et al.
    Published: (2024)

Search Options

  • Search History
  • Advanced Search

Find More

  • Browse the Catalog
  • Browse Alphabetically
  • Explore Channels
  • Course Reserves
  • New Items

Need Help?

  • Search Tips
  • Ask a Librarian
  • FAQs