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| Main Authors: | , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2604.06351 |
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| _version_ | 1866914455461298176 |
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| author | Suntornwipat, Nattakarn Isberg, Jan Majdi, Saman |
| author_facet | Suntornwipat, Nattakarn Isberg, Jan Majdi, Saman |
| contents | Device stability is essential for quantum information technologies, where reliable control of electronic states is crucial. Diamond valleytronics offers a promising platform by exploiting the valley degree of freedom to store and manipulate information. In this work, we demonstrate a diamond-based valley transistor with a dual-gate, two-drain architecture that enables tunable valley-polarized transport via gate voltage modulation. By leveraging the significant effective-mass anisotropy of diamond's conduction band valleys, this architecture provides control over spatial distribution and transit times. We further demonstrate that valley-polarized transport in diamond is remarkably robust against thermal variations over macroscopic distances. These results demonstrate the resilience of valley states and highlight diamond's potential for energy-efficient valleytronic devices in next-generation quantum and high-power electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_06351 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Tunable Valley Polarization in Diamond Suntornwipat, Nattakarn Isberg, Jan Majdi, Saman Mesoscale and Nanoscale Physics Materials Science Applied Physics Device stability is essential for quantum information technologies, where reliable control of electronic states is crucial. Diamond valleytronics offers a promising platform by exploiting the valley degree of freedom to store and manipulate information. In this work, we demonstrate a diamond-based valley transistor with a dual-gate, two-drain architecture that enables tunable valley-polarized transport via gate voltage modulation. By leveraging the significant effective-mass anisotropy of diamond's conduction band valleys, this architecture provides control over spatial distribution and transit times. We further demonstrate that valley-polarized transport in diamond is remarkably robust against thermal variations over macroscopic distances. These results demonstrate the resilience of valley states and highlight diamond's potential for energy-efficient valleytronic devices in next-generation quantum and high-power electronics. |
| title | Tunable Valley Polarization in Diamond |
| topic | Mesoscale and Nanoscale Physics Materials Science Applied Physics |
| url | https://arxiv.org/abs/2604.06351 |