Copertina

High Breakdown Field Multi-kV UWBG AlGaN Transistors

Fuente: arXiv

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Dettagli Bibliografici
Autori principali:	Shin, Seungheon, Liddy, Kyle, Pratt, Jon, Cao, Can, Zhu, Yinxuan, Klein, Brianna A., Armstrong, Andrew, Allerman, Andrew A., Rajan, Siddharth
Natura:	Preprint
Pubblicazione:	2026
Soggetti:	Applied Physics Materials Science
Accesso online:	Acceder al recurso
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