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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
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2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2604.06656 |
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| _version_ | 1866913013803515904 |
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| author | Zhang, Shi-Rui Nandi, Sanjoy Kumar Kremer, Felipe Nath, Shimul Kanti Ji, Wenzhong Ratcliff, Thomas Li, Li Ekins-Daukes, Nicholas J. Lu, Teng Liu, Yun Elliman, Robert Glen |
| author_facet | Zhang, Shi-Rui Nandi, Sanjoy Kumar Kremer, Felipe Nath, Shimul Kanti Ji, Wenzhong Ratcliff, Thomas Li, Li Ekins-Daukes, Nicholas J. Lu, Teng Liu, Yun Elliman, Robert Glen |
| contents | Oxide semiconductors have emerged as common channel materials in transistors and hold promise for next-generation electronics, yet achieving high mobility typically requires costly vacuum-based techniques. Here, ultrathin (5-nm) indium native oxide (InOx) prepared by ambient-air liquid-metal printing (LMP) at low temperature (250 °C), is applied as semiconducting channel in field-effect transistor (FET). The resulting InOx is found to be polycrystalline with large lateral grains that extend vertically throughout the film thickness. InOx FETs in a transfer length method (TLM) configuration demonstrate a high conductivity mobility (uCON) of 125 cm2 V-1 s-1, with systematic analysis of contact resistance confirming potential for channel length scaling. Integration with atomic-layer-deposited (ALD) gate dielectrics further reveals excellent compatibility, for instance, InOx FET integrated with HfO2 exhibits a high field-effect mobility (uFE) of 107 cm2 V-1 s-1, an on/off current ratio (ION/IOFF) of >107, a subthreshold swing (SS) of 204 mV dec-1, a gate leakage of <10-6 A cm-2, while maintaining stable performance over 104 endurance cycles without degradation. Post-fabrication oxygen-plasma treatment is applied to achieve enhancement-mode operation and a depletion-load inverter is demonstrated, exhibiting a voltage gain of 69.8 V/V. These results demonstrate the great potential of LMP InOx as semiconducting channel in high-performance and power-efficient transistors for next-generation oxide electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_06656 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | High-Mobility Indium Native Oxide Transistors via Liquid-Metal Printing in Air Zhang, Shi-Rui Nandi, Sanjoy Kumar Kremer, Felipe Nath, Shimul Kanti Ji, Wenzhong Ratcliff, Thomas Li, Li Ekins-Daukes, Nicholas J. Lu, Teng Liu, Yun Elliman, Robert Glen Materials Science Oxide semiconductors have emerged as common channel materials in transistors and hold promise for next-generation electronics, yet achieving high mobility typically requires costly vacuum-based techniques. Here, ultrathin (5-nm) indium native oxide (InOx) prepared by ambient-air liquid-metal printing (LMP) at low temperature (250 °C), is applied as semiconducting channel in field-effect transistor (FET). The resulting InOx is found to be polycrystalline with large lateral grains that extend vertically throughout the film thickness. InOx FETs in a transfer length method (TLM) configuration demonstrate a high conductivity mobility (uCON) of 125 cm2 V-1 s-1, with systematic analysis of contact resistance confirming potential for channel length scaling. Integration with atomic-layer-deposited (ALD) gate dielectrics further reveals excellent compatibility, for instance, InOx FET integrated with HfO2 exhibits a high field-effect mobility (uFE) of 107 cm2 V-1 s-1, an on/off current ratio (ION/IOFF) of >107, a subthreshold swing (SS) of 204 mV dec-1, a gate leakage of <10-6 A cm-2, while maintaining stable performance over 104 endurance cycles without degradation. Post-fabrication oxygen-plasma treatment is applied to achieve enhancement-mode operation and a depletion-load inverter is demonstrated, exhibiting a voltage gain of 69.8 V/V. These results demonstrate the great potential of LMP InOx as semiconducting channel in high-performance and power-efficient transistors for next-generation oxide electronics. |
| title | High-Mobility Indium Native Oxide Transistors via Liquid-Metal Printing in Air |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.06656 |