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| Main Author: | |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2604.06751 |
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Table of Contents:
- Scanning Tunneling Microscopy (STM) has revolutionized our atomic scale understanding of surfaces and accelerated progress in nanotechnology. This technique, however, is restricted to metal or semiconducting samples, as it requires a tiny current to stabilize the tip-sample distance with atomic scale precision. We developed a new imaging and feedback method that relies on true alternating current (AC) without any direct current (DC) component. This technique does not only enable the imaging on non-conducting surfaces with atomic resolution, like (thin) glass and oxides, it provides also access to high-frequency electronic sample information. We demonstrate that it is possible to measure on 25nm thick silicon oxide with 10 MHz tunneling current.