Alterelectricity: Electrical Analogue of Altermagnetism
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arXiv
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| Autores principales: | , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866914458171867136 |
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| author | Fang, Shibo Wang, Jianhua Guo, Zhenzhou Gong, Jialin Meng, Haiyu Wang, Wenhong Cheng, Zhenxiang Wang, Xiaotian Ang, Yee Sin |
| author_facet | Fang, Shibo Wang, Jianhua Guo, Zhenzhou Gong, Jialin Meng, Haiyu Wang, Wenhong Cheng, Zhenxiang Wang, Xiaotian Ang, Yee Sin |
| contents | We propose alterelectricity, an electrical analogue of altermagnetism, in which two switchable states possess alternating band structures. Such alterelectric states arise when a switchable sublattice-selective structural change connects two configurations related by a non-inversion symmetry. Using an anisotropic Lieb-lattice model, we establish a general symmetry framework for identifying alterelectricity. We further identify two material realizations of alterelectricity: (i) interlayer sliding in bilayers, as exemplified by tetragonal Ag2N and hexagonal FeHfI6; and (ii) ferroelectrically switchable Ti-adsorbed SnP2S6. We also propose an alterelectric tunnel junction that exploits switchable anisotropic Fermi surfaces to achieve a sizable tunneling electroresistance of 120%. This work establishes the foundational concept of alterelectricity and expands the material landscape of ferroic electronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_07112 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Alterelectricity: Electrical Analogue of Altermagnetism Fang, Shibo Wang, Jianhua Guo, Zhenzhou Gong, Jialin Meng, Haiyu Wang, Wenhong Cheng, Zhenxiang Wang, Xiaotian Ang, Yee Sin Materials Science We propose alterelectricity, an electrical analogue of altermagnetism, in which two switchable states possess alternating band structures. Such alterelectric states arise when a switchable sublattice-selective structural change connects two configurations related by a non-inversion symmetry. Using an anisotropic Lieb-lattice model, we establish a general symmetry framework for identifying alterelectricity. We further identify two material realizations of alterelectricity: (i) interlayer sliding in bilayers, as exemplified by tetragonal Ag2N and hexagonal FeHfI6; and (ii) ferroelectrically switchable Ti-adsorbed SnP2S6. We also propose an alterelectric tunnel junction that exploits switchable anisotropic Fermi surfaces to achieve a sizable tunneling electroresistance of 120%. This work establishes the foundational concept of alterelectricity and expands the material landscape of ferroic electronics. |
| title | Alterelectricity: Electrical Analogue of Altermagnetism |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.07112 |