High Performance 4H-SiC Optically Controlled MOS Transistor
Fuente:
arXiv
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| Autori principali: | , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866917394401722368 |
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| author | Chen, Sitian Tian, Ziqian Zhang, Guoliang Cai, Jiafa Hong, Rongdun Chen, Xiaping Lin, Dingqu Wu, Shaoxiong Zhang, Yuning Zhang, Feng |
| author_facet | Chen, Sitian Tian, Ziqian Zhang, Guoliang Cai, Jiafa Hong, Rongdun Chen, Xiaping Lin, Dingqu Wu, Shaoxiong Zhang, Yuning Zhang, Feng |
| contents | This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the conventional gate electrode with a semi-transparent optical window, the device enables direct modulation of channel conductivity through ultraviolet illumination. Electrical and optical characterization demonstrates that under an optical power density above 0.1 W/cm^2, the device achieves an on/off current ratio exceeding 10^6 between illuminated and dark states. Notably, at an optical power density of 0.031 W/cm^2, the photogenerated current density exceeds that obtained under a gate bias of 15 V in magnitude. Energy band analysis confirms that the optical switching mechanism operates through direct photogenerated carrier generation and transport, fundamentally differing from conventional gate voltage control and thus circumventing interface-trap and EMI-related limitations. Dynamic measurements further reveal fast switching capability, with a rise time of 1.44 ns. These results validate the feasibility of optically driven switching in SiC-based devices and highlight their potential for high-speed logic applications. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_07673 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | High Performance 4H-SiC Optically Controlled MOS Transistor Chen, Sitian Tian, Ziqian Zhang, Guoliang Cai, Jiafa Hong, Rongdun Chen, Xiaping Lin, Dingqu Wu, Shaoxiong Zhang, Yuning Zhang, Feng Applied Physics This paper introduces an optically controlled 4H-SiC MOSFET designed to avoid the gate-oxide interface unreliability and electromagnetic interference (EMI) susceptibility inherent in conventional voltage-driven devices. By replacing the conventional gate electrode with a semi-transparent optical window, the device enables direct modulation of channel conductivity through ultraviolet illumination. Electrical and optical characterization demonstrates that under an optical power density above 0.1 W/cm^2, the device achieves an on/off current ratio exceeding 10^6 between illuminated and dark states. Notably, at an optical power density of 0.031 W/cm^2, the photogenerated current density exceeds that obtained under a gate bias of 15 V in magnitude. Energy band analysis confirms that the optical switching mechanism operates through direct photogenerated carrier generation and transport, fundamentally differing from conventional gate voltage control and thus circumventing interface-trap and EMI-related limitations. Dynamic measurements further reveal fast switching capability, with a rise time of 1.44 ns. These results validate the feasibility of optically driven switching in SiC-based devices and highlight their potential for high-speed logic applications. |
| title | High Performance 4H-SiC Optically Controlled MOS Transistor |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2604.07673 |