Closing the Loop in Epitaxy with Machine Learning: Joint Optimization of Growth and Geometry in On-Chip Lasers
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| Autores principales: | , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| _version_ | 1866908949630943232 |
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| author | Athavale, Mihir R. Church, Stephen A. Wong, Wei Wen Low, Andre KY Tan, Hark Hoe Hippalgaonkar, Kedar Parkinson, Patrick |
| author_facet | Athavale, Mihir R. Church, Stephen A. Wong, Wei Wen Low, Andre KY Tan, Hark Hoe Hippalgaonkar, Kedar Parkinson, Patrick |
| contents | Achieving device-to-device reproducibility is a critical bottleneck for scalable photonic integrated circuits, as subtle variations in bottom-up epitaxial growth and fabrication severely limit yield. We present a machine learning workflow for III-V multi-quantum well microring lasers that first optimizes growth and geometry parameters via multi-objective Bayesian optimization, then leverages variational autoencoders (VAEs) to attribute residual device-to-device variability to its underlying sources. By explicitly targeting threshold variance alongside absolute performance, we demonstrate 100% lasing yield across all designs. The optimized multi-quantum well microring laser fields achieved a median lasing threshold of $16~μ\mathrm{J}\,\mathrm{cm}^{-2}\,\mathrm{pulse}^{-1}$, a $73\%$ reduction in threshold variance relative to the previously reported best values, and a median emission wavelength of $1333~\mathrm{nm}$, in the telecommunications O-band. Furthermore, to diagnose residual performance dispersion under nominally identical conditions, VAEs were used to isolate the key components of device morphology that impact performance. This analysis successfully decoupled geometric from material disorder, quantitatively linking previously unmeasured morphological variations to population-level threshold fluctuations. This data-driven workflow bridges the gap between fundamental epitaxy and reliable manufacturing, establishing a generalizable blueprint for designing and yield-optimizing complex, non-linear optoelectronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_08390 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Closing the Loop in Epitaxy with Machine Learning: Joint Optimization of Growth and Geometry in On-Chip Lasers Athavale, Mihir R. Church, Stephen A. Wong, Wei Wen Low, Andre KY Tan, Hark Hoe Hippalgaonkar, Kedar Parkinson, Patrick Optics Achieving device-to-device reproducibility is a critical bottleneck for scalable photonic integrated circuits, as subtle variations in bottom-up epitaxial growth and fabrication severely limit yield. We present a machine learning workflow for III-V multi-quantum well microring lasers that first optimizes growth and geometry parameters via multi-objective Bayesian optimization, then leverages variational autoencoders (VAEs) to attribute residual device-to-device variability to its underlying sources. By explicitly targeting threshold variance alongside absolute performance, we demonstrate 100% lasing yield across all designs. The optimized multi-quantum well microring laser fields achieved a median lasing threshold of $16~μ\mathrm{J}\,\mathrm{cm}^{-2}\,\mathrm{pulse}^{-1}$, a $73\%$ reduction in threshold variance relative to the previously reported best values, and a median emission wavelength of $1333~\mathrm{nm}$, in the telecommunications O-band. Furthermore, to diagnose residual performance dispersion under nominally identical conditions, VAEs were used to isolate the key components of device morphology that impact performance. This analysis successfully decoupled geometric from material disorder, quantitatively linking previously unmeasured morphological variations to population-level threshold fluctuations. This data-driven workflow bridges the gap between fundamental epitaxy and reliable manufacturing, establishing a generalizable blueprint for designing and yield-optimizing complex, non-linear optoelectronic devices. |
| title | Closing the Loop in Epitaxy with Machine Learning: Joint Optimization of Growth and Geometry in On-Chip Lasers |
| topic | Optics |
| url | https://arxiv.org/abs/2604.08390 |