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Main Authors: Stoliarov, Dmitrii, Pavlov, Nikolay G., Donodin, Aleksandr, Elson, Daniel J., Mikhailov, Vitaly, Luo, Jiawei, Koptyaev, Sergey, Emmerich, Robert, Luis, Ruben S., Furukawa, Hideaki, Schubert, Colja, Freund, Ronald, Wakayama, Yuta, Tsuritani, Takehiro, DiGiovanni, David J., Jost, John D., Karpov, Maxim, Turitsyn, Sergei K.
Format: Preprint
Published: 2026
Subjects:
Online Access:https://arxiv.org/abs/2604.08767
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author Stoliarov, Dmitrii
Pavlov, Nikolay G.
Donodin, Aleksandr
Elson, Daniel J.
Mikhailov, Vitaly
Luo, Jiawei
Koptyaev, Sergey
Emmerich, Robert
Luis, Ruben S.
Furukawa, Hideaki
Schubert, Colja
Freund, Ronald
Wakayama, Yuta
Tsuritani, Takehiro
DiGiovanni, David J.
Jost, John D.
Karpov, Maxim
Turitsyn, Sergei K.
author_facet Stoliarov, Dmitrii
Pavlov, Nikolay G.
Donodin, Aleksandr
Elson, Daniel J.
Mikhailov, Vitaly
Luo, Jiawei
Koptyaev, Sergey
Emmerich, Robert
Luis, Ruben S.
Furukawa, Hideaki
Schubert, Colja
Freund, Ronald
Wakayama, Yuta
Tsuritani, Takehiro
DiGiovanni, David J.
Jost, John D.
Karpov, Maxim
Turitsyn, Sergei K.
contents The O-band (1260-1360 nm), located near the minimum of chromatic dispersion of standard single-mode fiber, is the transmission window of major interest and importance for short-reach data-center interconnects. However, full capacity offered by this spectral band is yet to be unlocked, due to limited availability of scalable multi-wavelength, high-power, low noise O-band light engines. While Kerr microcombs in CMOS-compatible silicon nitride resonators provide mutually coherent wavelength channels with precise spacing and chip-scale footprints, their practical deployment in the O-band has been hindered by limited pump laser power, insufficient per-line power and the lack of flat, wideband amplification technologies to uniformly boost multiple coherent carriers. Here we demonstrate a high-power O-band soliton microcomb architecture that overcomes this bottleneck by combining self-injection-locked (SIL) operation in a Silicon Nitride microring with a single-stage bismuth-doped phosphosilicate fiber amplifier designed for wideband, flat-top gain. The SIL microcomb operates with an 834 GHz free spectral range and spans over 1050-1650 nm. The amplifier simultaneously boosts 21 O-band lines across 100 nm to powers exceeding 0 dBm per carrier without gain flattening or external equalization, while preserving low-noise characteristics. We validate each amplified microcomb line as a carrier across the entire O-band using dual-polarization 32 GBaud 64-QAM coherent transmission. This approach establishes a practical route towards high-power, broadband O-band microcomb engines for next-generation data-center interconnects and scalable photonic systems.
format Preprint
id arxiv_https___arxiv_org_abs_2604_08767
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Unlocking the O-Band: high-power, broadband soliton microcomb
Stoliarov, Dmitrii
Pavlov, Nikolay G.
Donodin, Aleksandr
Elson, Daniel J.
Mikhailov, Vitaly
Luo, Jiawei
Koptyaev, Sergey
Emmerich, Robert
Luis, Ruben S.
Furukawa, Hideaki
Schubert, Colja
Freund, Ronald
Wakayama, Yuta
Tsuritani, Takehiro
DiGiovanni, David J.
Jost, John D.
Karpov, Maxim
Turitsyn, Sergei K.
Optics
The O-band (1260-1360 nm), located near the minimum of chromatic dispersion of standard single-mode fiber, is the transmission window of major interest and importance for short-reach data-center interconnects. However, full capacity offered by this spectral band is yet to be unlocked, due to limited availability of scalable multi-wavelength, high-power, low noise O-band light engines. While Kerr microcombs in CMOS-compatible silicon nitride resonators provide mutually coherent wavelength channels with precise spacing and chip-scale footprints, their practical deployment in the O-band has been hindered by limited pump laser power, insufficient per-line power and the lack of flat, wideband amplification technologies to uniformly boost multiple coherent carriers. Here we demonstrate a high-power O-band soliton microcomb architecture that overcomes this bottleneck by combining self-injection-locked (SIL) operation in a Silicon Nitride microring with a single-stage bismuth-doped phosphosilicate fiber amplifier designed for wideband, flat-top gain. The SIL microcomb operates with an 834 GHz free spectral range and spans over 1050-1650 nm. The amplifier simultaneously boosts 21 O-band lines across 100 nm to powers exceeding 0 dBm per carrier without gain flattening or external equalization, while preserving low-noise characteristics. We validate each amplified microcomb line as a carrier across the entire O-band using dual-polarization 32 GBaud 64-QAM coherent transmission. This approach establishes a practical route towards high-power, broadband O-band microcomb engines for next-generation data-center interconnects and scalable photonic systems.
title Unlocking the O-Band: high-power, broadband soliton microcomb
topic Optics
url https://arxiv.org/abs/2604.08767