Grain Growth Kinetics in (Cr,Mo,Ta,V,W)C1-δ High-Entropy Carbide Ceramics
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2026
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| author | Sarikhani, Ali Hilmas, Gregory E. Lipke, David W. Wolfe, Douglas E. Curtarolo, Stefano Dillon, Shen J. Mirzaei, Ahmad Fahrenholtz, William G. |
| author_facet | Sarikhani, Ali Hilmas, Gregory E. Lipke, David W. Wolfe, Douglas E. Curtarolo, Stefano Dillon, Shen J. Mirzaei, Ahmad Fahrenholtz, William G. |
| contents | Understanding grain-boundary mobility during spark plasma sintering can enable microstructure control in high-entropy carbides, yet quantitative grain-growth kinetics remain scarce. In this work, grain growth kinetics and densification behavior were investigated for single-phase fully dense (Cr,Mo,Ta,V,W)C1-δ high-entropy carbide ceramics. Specimens were densified by spark plasma sintering for a constant dwell time of 10 min at temperatures between 1750 °C and 1950 °C to isolate the role of temperature on microstructural evolution. Increasing sintering temperature produced grain growth and increased lattice parameter, while maintaining a single-phase rock salt structure. Elemental mapping showed a progressive reduction of Ta segregation with increasing sintering temperature, suggesting enhanced chemical homogenization at elevated temperatures. Grain growth kinetics were analyzed using a normal grain growth model with an assumed growth exponent of n=3, physically reasonable for grain-boundary-controlled growth influenced by solute and vacancy pinning. Arrhenius analysis of the growth factor yielded an apparent activation energy of approximately 620 kJ mol-1, comparable to diffusion-controlled processes in refractory transition-metal carbides. Densification curves revealed rapid consolidation prior to reaching the peak temperature followed by temperature-dominated grain coarsening. These results establish quantitative relationships between densification temperature, grain growth, and diffusion kinetics in a carbide system, providing insight into the microstructural stability of high-entropy, ultra-high-temperature carbide ceramics. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2604_08961 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Grain Growth Kinetics in (Cr,Mo,Ta,V,W)C1-δ High-Entropy Carbide Ceramics Sarikhani, Ali Hilmas, Gregory E. Lipke, David W. Wolfe, Douglas E. Curtarolo, Stefano Dillon, Shen J. Mirzaei, Ahmad Fahrenholtz, William G. Materials Science Understanding grain-boundary mobility during spark plasma sintering can enable microstructure control in high-entropy carbides, yet quantitative grain-growth kinetics remain scarce. In this work, grain growth kinetics and densification behavior were investigated for single-phase fully dense (Cr,Mo,Ta,V,W)C1-δ high-entropy carbide ceramics. Specimens were densified by spark plasma sintering for a constant dwell time of 10 min at temperatures between 1750 °C and 1950 °C to isolate the role of temperature on microstructural evolution. Increasing sintering temperature produced grain growth and increased lattice parameter, while maintaining a single-phase rock salt structure. Elemental mapping showed a progressive reduction of Ta segregation with increasing sintering temperature, suggesting enhanced chemical homogenization at elevated temperatures. Grain growth kinetics were analyzed using a normal grain growth model with an assumed growth exponent of n=3, physically reasonable for grain-boundary-controlled growth influenced by solute and vacancy pinning. Arrhenius analysis of the growth factor yielded an apparent activation energy of approximately 620 kJ mol-1, comparable to diffusion-controlled processes in refractory transition-metal carbides. Densification curves revealed rapid consolidation prior to reaching the peak temperature followed by temperature-dominated grain coarsening. These results establish quantitative relationships between densification temperature, grain growth, and diffusion kinetics in a carbide system, providing insight into the microstructural stability of high-entropy, ultra-high-temperature carbide ceramics. |
| title | Grain Growth Kinetics in (Cr,Mo,Ta,V,W)C1-δ High-Entropy Carbide Ceramics |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.08961 |