Giant resonant nonlinear THz valley Hall effect in 2D Dirac semiconductors

Fuente: arXiv
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Auteurs principaux: Ivanova, V. N., Kovalev, V. M., Savenko, I. G.
Format: Preprint
Publié: 2026
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author Ivanova, V. N.
Kovalev, V. M.
Savenko, I. G.
author_facet Ivanova, V. N.
Kovalev, V. M.
Savenko, I. G.
contents We predict a giant cyclotron resonance in the nonlinear valley Hall response of inversion-asymmetric two-dimensional semiconductors subjected to crossed terahertz electric and static magnetic fields. By employing a two-band Hamiltonian that incorporates both linear and quadratic in momentum terms, thereby capturing the essential orbital texture and broken inversion symmetry, we develop a kinetic theory that accounts for antisymmetric skew scattering from impurities. Solving the Boltzmann transport equation we uncover resonant photocurrents that exhibit a sharp, polarity-switching cyclotron peak and a nontrivial polarization response dictated by the underlying D3h crystal symmetry. Our results establish a universal mechanism for frequency-selective, phase-sensitive valley current control, directly accessible in monolayer transition metal dichalcogenides. This work provides a pathway for harnessing resonant nonlinear transport in valleytronic and terahertz optoelectronic devices.
format Preprint
id arxiv_https___arxiv_org_abs_2604_08994
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Giant resonant nonlinear THz valley Hall effect in 2D Dirac semiconductors
Ivanova, V. N.
Kovalev, V. M.
Savenko, I. G.
Mesoscale and Nanoscale Physics
We predict a giant cyclotron resonance in the nonlinear valley Hall response of inversion-asymmetric two-dimensional semiconductors subjected to crossed terahertz electric and static magnetic fields. By employing a two-band Hamiltonian that incorporates both linear and quadratic in momentum terms, thereby capturing the essential orbital texture and broken inversion symmetry, we develop a kinetic theory that accounts for antisymmetric skew scattering from impurities. Solving the Boltzmann transport equation we uncover resonant photocurrents that exhibit a sharp, polarity-switching cyclotron peak and a nontrivial polarization response dictated by the underlying D3h crystal symmetry. Our results establish a universal mechanism for frequency-selective, phase-sensitive valley current control, directly accessible in monolayer transition metal dichalcogenides. This work provides a pathway for harnessing resonant nonlinear transport in valleytronic and terahertz optoelectronic devices.
title Giant resonant nonlinear THz valley Hall effect in 2D Dirac semiconductors
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2604.08994