Self-compensation by silicon $DX$ centers in ultrawide-bandgap nitrides

Documenti analoghi

• Assessing the SCAN functional for deep defects and small polarons in wide-bandgap semiconductors and insulators
  di: Wickramaratne, Darshana, et al.
  Pubblicazione: (2023)
• Nonradiative quenching of EPR signals in germanium-doped AlGaN: evidence for DX-center formation
  di: Forbus, Jason, et al.
  Pubblicazione: (2024)
• The deep-acceptor nature of the chalcogen vacancies in 2D transition-metal dichalcogenides
  di: Khalid, Shoaib, et al.
  Pubblicazione: (2023)
• Direct evidence for carbon incorporation on the nitrogen site in AlN
  di: Wickramaratne, Darshana, et al.
  Pubblicazione: (2024)
• Free-carrier screening unlocks high electron mobility in ultrawide bandgap semiconductor CaSnO$_3$
  di: Gong, Jiayi, et al.
  Pubblicazione: (2025)