Two-Dimensional Spin-Antiferroelectric Altermagnets with Giant Spin Splitting: From Model to Material Realization
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arXiv
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| Autores principales: | , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| Materias: | |
| Acceso en línea: | |
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| _version_ | 1866908957540352000 |
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| author | Fu, Zesen Li, Aolin Zhou, Wenzhe Ouyang, Fangping Zheng, Fawei Yao, Yugui |
| author_facet | Fu, Zesen Li, Aolin Zhou, Wenzhe Ouyang, Fangping Zheng, Fawei Yao, Yugui |
| contents | The realization of multiferroic altermagnets featuring giant intrinsic spin splitting, hold great promise for next-generation spintronics. In this work, based on the recently proposed concept of spin-antiferroelectric (spin-AFE), we construct a class of two-dimensional (2D) multiferroic altermagnets, termed 2D spin-antiferroelectric altermagnets (2D spin-AFEAMs), enabling electrical control of spin polarization via a gate field. Furthermore, we propose a general design strategy for constructing 2D spin-AFEAMs with large intrinsic spin splitting. Guided by this strategy, we predict monolayer $(\mathrm{CoCl})_2\mathrm{Te}$ and its family materials as potential candidates of 2D spin-AFEAM. We uncover a highly tunable transport regime in monolayer $(\mathrm{CoCl})_2\mathrm{Te}$, where the spin current can be switched via the in-plane electric field angle when hole-doped, and via the gate field polarity when electron-doped. Our work enriches the family of 2D multiferroics and provides a blueprint for realizing high-performance, electrically switchable altermagnetic spintronic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_10612 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Two-Dimensional Spin-Antiferroelectric Altermagnets with Giant Spin Splitting: From Model to Material Realization Fu, Zesen Li, Aolin Zhou, Wenzhe Ouyang, Fangping Zheng, Fawei Yao, Yugui Materials Science The realization of multiferroic altermagnets featuring giant intrinsic spin splitting, hold great promise for next-generation spintronics. In this work, based on the recently proposed concept of spin-antiferroelectric (spin-AFE), we construct a class of two-dimensional (2D) multiferroic altermagnets, termed 2D spin-antiferroelectric altermagnets (2D spin-AFEAMs), enabling electrical control of spin polarization via a gate field. Furthermore, we propose a general design strategy for constructing 2D spin-AFEAMs with large intrinsic spin splitting. Guided by this strategy, we predict monolayer $(\mathrm{CoCl})_2\mathrm{Te}$ and its family materials as potential candidates of 2D spin-AFEAM. We uncover a highly tunable transport regime in monolayer $(\mathrm{CoCl})_2\mathrm{Te}$, where the spin current can be switched via the in-plane electric field angle when hole-doped, and via the gate field polarity when electron-doped. Our work enriches the family of 2D multiferroics and provides a blueprint for realizing high-performance, electrically switchable altermagnetic spintronic devices. |
| title | Two-Dimensional Spin-Antiferroelectric Altermagnets with Giant Spin Splitting: From Model to Material Realization |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.10612 |