Effect of Indium doping on structural and thermoelec-tric properties of SnTe
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arXiv
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| Auteurs principaux: | , , , , , , |
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| Format: | Preprint |
| Publié: |
2026
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| _version_ | 1866908959770673152 |
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| author | Das, Diptasikha Jana, A. Mahakal, S. Sardar, Pallabi Seal, J. Hussain, Shamima Malik, Kartick |
| author_facet | Das, Diptasikha Jana, A. Mahakal, S. Sardar, Pallabi Seal, J. Hussain, Shamima Malik, Kartick |
| contents | The solid state reaction method is employed to synthesize Sn1-xInxTe samples. Power Factors of synthesized samples are estimated from resistivity and thermopower data. Modifications in structural parameters, resistivity and thermopower owing to In doping in SnTe thermoelectric material are reported. In-depth structural analysis, employing Rietveld refinement of X-ray diffraction data, confirms the substitution of Sn by In. A minute amount of embedded phases in synthesized samples is revealed from the refinement of X-ray diffraction data. Williamson-Hall and modified Williamson-Hall methods are employed to estimate dislocation density and strain. The highest power factor and maximum host phases are simultaneously achieved for the Sn0.96In0.04Te sample amid the synthesized Sn1-xInxTe samples. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_11117 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Effect of Indium doping on structural and thermoelec-tric properties of SnTe Das, Diptasikha Jana, A. Mahakal, S. Sardar, Pallabi Seal, J. Hussain, Shamima Malik, Kartick Materials Science The solid state reaction method is employed to synthesize Sn1-xInxTe samples. Power Factors of synthesized samples are estimated from resistivity and thermopower data. Modifications in structural parameters, resistivity and thermopower owing to In doping in SnTe thermoelectric material are reported. In-depth structural analysis, employing Rietveld refinement of X-ray diffraction data, confirms the substitution of Sn by In. A minute amount of embedded phases in synthesized samples is revealed from the refinement of X-ray diffraction data. Williamson-Hall and modified Williamson-Hall methods are employed to estimate dislocation density and strain. The highest power factor and maximum host phases are simultaneously achieved for the Sn0.96In0.04Te sample amid the synthesized Sn1-xInxTe samples. |
| title | Effect of Indium doping on structural and thermoelec-tric properties of SnTe |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.11117 |