Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements
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arXiv
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| Autori principali: | , , , , , , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866911588061020160 |
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| author | Asanovski, R. Rinaudo, P. Chasin, A. Zhao, Y. Dekkers, H. F. W. van Setten, M. J. Matsubayashi, D. Rassoul, N. Belmonte, A. Kar, G. S. Kaczer, B. Franco, J. |
| author_facet | Asanovski, R. Rinaudo, P. Chasin, A. Zhao, Y. Dekkers, H. F. W. van Setten, M. J. Matsubayashi, D. Rassoul, N. Belmonte, A. Kar, G. S. Kaczer, B. Franco, J. |
| contents | We investigate the origin of negative threshold voltage shifts in back-gated amorphous IGZO TFTs under positive bias and high temperature stress. Combined DC and 1/f noise measurements reveal that the stress does not generate new dielectric traps but instead broadens the IGZO conduction band tail states. A recovery experiment confirms that the associated threshold voltage, subthreshold swing, and noise degradation are reversible. Simulations using an in-house Poisson solver confirm the experimental observations that high-temperature stress increases hydrogen doping and the density of sub-gap states. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_11149 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements Asanovski, R. Rinaudo, P. Chasin, A. Zhao, Y. Dekkers, H. F. W. van Setten, M. J. Matsubayashi, D. Rassoul, N. Belmonte, A. Kar, G. S. Kaczer, B. Franco, J. Materials Science We investigate the origin of negative threshold voltage shifts in back-gated amorphous IGZO TFTs under positive bias and high temperature stress. Combined DC and 1/f noise measurements reveal that the stress does not generate new dielectric traps but instead broadens the IGZO conduction band tail states. A recovery experiment confirms that the associated threshold voltage, subthreshold swing, and noise degradation are reversible. Simulations using an in-house Poisson solver confirm the experimental observations that high-temperature stress increases hydrogen doping and the density of sub-gap states. |
| title | Band Tail State Broadening in IGZO TFTs After pBTI-Induced Negative VT Shift Revealed via DC and 1/f Noise Measurements |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.11149 |