ALD W-Doped SnO$_2$ TFTs for Indium-Free BEOL Electronics
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arXiv
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| Autores principales: | , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| _version_ | 1866910124935741440 |
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| author | Patil, Mansi Anil Dhoble, Devarshi Kubakaddi, Shivaram Raturi, Mamta Villena, Marco A Thareja, Gaurav Lodha, Saurabh |
| author_facet | Patil, Mansi Anil Dhoble, Devarshi Kubakaddi, Shivaram Raturi, Mamta Villena, Marco A Thareja, Gaurav Lodha, Saurabh |
| contents | This work reports back-end-of-line (BEOL) compatible, thin-film transistors (TFTs) with sub-10 nm tungsten-doped tin oxide (TWO) channels deposited by atomic layer deposition (ALD) at 150 $^\circ$C. TFTs with undoped SnO$_{\mathrm{x}}$, undoped WO$_{\mathrm{x}}$, and W-doped SnO$_{\mathrm{x}}$ channels with W concentrations of 5% and 10% were investigated. TFT with 10% W doping exhibited the best electrostatic control and overall device performance. Post-fabrication O$_{\mathrm{2}}$ annealing at 300 $^\circ$C for 5 minutes significantly enhanced device characteristics, reducing the subthreshold swing (SS) by nearly 2$\times$, increasing the I$_{\mathrm{on}}$/I$_{\mathrm{off}}$ ratio from $10^7$ to $10^9$, decreasing hysteresis by nearly 3$\times$ and positive bias stress-induced threshold shift by over 2$\times$ to a low value of 93 mV at a stress field of 4 MV/cm. Kinetic Monte Carlo simulations using Ginestra$^{\mathrm{TM}}$ support the experimental observations and attribute the bias instability to charge trapping in the gate dielectric and at the interface. This work demonstrates low-temperature ALD-grown TWO TFTs as a promising indium-free platform for BEOL and monolithic 3D integration. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_11333 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | ALD W-Doped SnO$_2$ TFTs for Indium-Free BEOL Electronics Patil, Mansi Anil Dhoble, Devarshi Kubakaddi, Shivaram Raturi, Mamta Villena, Marco A Thareja, Gaurav Lodha, Saurabh Applied Physics Materials Science This work reports back-end-of-line (BEOL) compatible, thin-film transistors (TFTs) with sub-10 nm tungsten-doped tin oxide (TWO) channels deposited by atomic layer deposition (ALD) at 150 $^\circ$C. TFTs with undoped SnO$_{\mathrm{x}}$, undoped WO$_{\mathrm{x}}$, and W-doped SnO$_{\mathrm{x}}$ channels with W concentrations of 5% and 10% were investigated. TFT with 10% W doping exhibited the best electrostatic control and overall device performance. Post-fabrication O$_{\mathrm{2}}$ annealing at 300 $^\circ$C for 5 minutes significantly enhanced device characteristics, reducing the subthreshold swing (SS) by nearly 2$\times$, increasing the I$_{\mathrm{on}}$/I$_{\mathrm{off}}$ ratio from $10^7$ to $10^9$, decreasing hysteresis by nearly 3$\times$ and positive bias stress-induced threshold shift by over 2$\times$ to a low value of 93 mV at a stress field of 4 MV/cm. Kinetic Monte Carlo simulations using Ginestra$^{\mathrm{TM}}$ support the experimental observations and attribute the bias instability to charge trapping in the gate dielectric and at the interface. This work demonstrates low-temperature ALD-grown TWO TFTs as a promising indium-free platform for BEOL and monolithic 3D integration. |
| title | ALD W-Doped SnO$_2$ TFTs for Indium-Free BEOL Electronics |
| topic | Applied Physics Materials Science |
| url | https://arxiv.org/abs/2604.11333 |