Berry curvature and field-induced intrinsic anomalous Hall effect in an antiferromagnet FeTe

Fuente: arXiv
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Hauptverfasser: Okamoto, Satoshi, Moreo, Adriana, Nagaosa, Naoto, Parkin, Stuart S. P.
Format: Preprint
Veröffentlicht: 2026
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author Okamoto, Satoshi
Moreo, Adriana
Nagaosa, Naoto
Parkin, Stuart S. P.
author_facet Okamoto, Satoshi
Moreo, Adriana
Nagaosa, Naoto
Parkin, Stuart S. P.
contents Berry curvature is ubiquitous in condensed matter physics and materials science. Its main consequence is the intrinsic anomalous Hall effect (AHE) in magnetic materials and plays a pivotal role in spintronic applications and quantum technologies. Here, we present a theoretical study of the intrinsic AHE in tetragonal FeTe, a semimetallic van der Waals antiferromagnet with compensated magnetic ordering at low temperatures. Using a realistic spin-fermion model, we demonstrate that FeTe exhibits a large Berry-curvature-driven AHE under an applied magnetic field. Our calculations reveal that the Hall conductivity of this compound is extremely sensitive to temperature and field strength and even exhibits sign reversal, highlighting FeTe as a prototypical platform where magnetism and topology combine to produce robust intrinsic Hall responses. This work establishes FeTe as a promising candidate for exploring quantum transport in low-dimensional correlated systems. We also discuss the implications for recent experimental results of the AHE and ordinary Hall effect reported for FeTe.
format Preprint
id arxiv_https___arxiv_org_abs_2604_11583
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Berry curvature and field-induced intrinsic anomalous Hall effect in an antiferromagnet FeTe
Okamoto, Satoshi
Moreo, Adriana
Nagaosa, Naoto
Parkin, Stuart S. P.
Materials Science
Strongly Correlated Electrons
Berry curvature is ubiquitous in condensed matter physics and materials science. Its main consequence is the intrinsic anomalous Hall effect (AHE) in magnetic materials and plays a pivotal role in spintronic applications and quantum technologies. Here, we present a theoretical study of the intrinsic AHE in tetragonal FeTe, a semimetallic van der Waals antiferromagnet with compensated magnetic ordering at low temperatures. Using a realistic spin-fermion model, we demonstrate that FeTe exhibits a large Berry-curvature-driven AHE under an applied magnetic field. Our calculations reveal that the Hall conductivity of this compound is extremely sensitive to temperature and field strength and even exhibits sign reversal, highlighting FeTe as a prototypical platform where magnetism and topology combine to produce robust intrinsic Hall responses. This work establishes FeTe as a promising candidate for exploring quantum transport in low-dimensional correlated systems. We also discuss the implications for recent experimental results of the AHE and ordinary Hall effect reported for FeTe.
title Berry curvature and field-induced intrinsic anomalous Hall effect in an antiferromagnet FeTe
topic Materials Science
Strongly Correlated Electrons
url https://arxiv.org/abs/2604.11583