High-Endurance, Low-loss Sb2Se3 Optical Switches on Silicon Nitride using Transparent Conductive Heaters
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arXiv
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| Autores principales: | , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| Materias: | |
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| _version_ | 1866917403596685312 |
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| author | Yu, Xingshi Chakraborty, Ipsita Johnson, Isaac Raptis, Savvas I. Luo, Qianbin Bucio, Thalia Dominguez Sandell, Elliot Vagionas, Chris Zeimpekis, Ioannis Miliou, Amalia Pleros, Nikos Gardes, Frederic |
| author_facet | Yu, Xingshi Chakraborty, Ipsita Johnson, Isaac Raptis, Savvas I. Luo, Qianbin Bucio, Thalia Dominguez Sandell, Elliot Vagionas, Chris Zeimpekis, Ioannis Miliou, Amalia Pleros, Nikos Gardes, Frederic |
| contents | We report an electrically actuated, low-loss non-volatile optical switch based on the phase-change material (PCM) Sb2Se3 integrated on a silicon nitride (Si3N4) platform. The device is fabricated using an 8-inch wafer-scale process flow, demonstrating the feasibility of scalable manufacturing for photonic integrated circuits (PICs). By employing transparent indium tin oxide (ITO) micro-heaters, reversible switching between the amorphous and crystalline states is achieved with an extinction ratio of 25~dB and an endurance exceeding 140 million switching cycles, establishing a new benchmark for non-volatile integrated photonic memory and reconfigurable architectures. Furthermore, multi-level operation beyond 6 bits can be repeatably demonstrated by tailoring the electrical pulse widths, enabling precise control of the optical phase. These results highlight a scalable and energy-efficient platform for high-density programmable and non-volatile photonic integrated systems. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_11649 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | High-Endurance, Low-loss Sb2Se3 Optical Switches on Silicon Nitride using Transparent Conductive Heaters Yu, Xingshi Chakraborty, Ipsita Johnson, Isaac Raptis, Savvas I. Luo, Qianbin Bucio, Thalia Dominguez Sandell, Elliot Vagionas, Chris Zeimpekis, Ioannis Miliou, Amalia Pleros, Nikos Gardes, Frederic Optics We report an electrically actuated, low-loss non-volatile optical switch based on the phase-change material (PCM) Sb2Se3 integrated on a silicon nitride (Si3N4) platform. The device is fabricated using an 8-inch wafer-scale process flow, demonstrating the feasibility of scalable manufacturing for photonic integrated circuits (PICs). By employing transparent indium tin oxide (ITO) micro-heaters, reversible switching between the amorphous and crystalline states is achieved with an extinction ratio of 25~dB and an endurance exceeding 140 million switching cycles, establishing a new benchmark for non-volatile integrated photonic memory and reconfigurable architectures. Furthermore, multi-level operation beyond 6 bits can be repeatably demonstrated by tailoring the electrical pulse widths, enabling precise control of the optical phase. These results highlight a scalable and energy-efficient platform for high-density programmable and non-volatile photonic integrated systems. |
| title | High-Endurance, Low-loss Sb2Se3 Optical Switches on Silicon Nitride using Transparent Conductive Heaters |
| topic | Optics |
| url | https://arxiv.org/abs/2604.11649 |