Salvato in:
| Autori principali: | , , , , , , , , , , |
|---|---|
| Natura: | Preprint |
| Pubblicazione: |
2026
|
| Soggetti: | |
| Accesso online: | https://arxiv.org/abs/2604.12510 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
Sommario:
- We report gate-controlled quantum-dot transport in a trilayer MoSe2 device that combines a graphite back gate beneath the active region, a separate global gate for conductive access regions, and local top finger gates. In the low-backgate regime, bias spectroscopy shows regular Coulomb-blockade diamonds characteristic of single-dot transport. As backgate is increased, additional low-bias structure develops beyond a simple single-dot pattern, indicating that the electrostatic landscape is reshaped and that a second dot becomes active in transport. In the higher-backgate regime, plunger-gate tuning and two-gate measurements establish a gate-reconfigurable double-dot configuration with two non-equivalent dots whose relative alignment and interdot coupling evolve with gate voltage. These results indicate that trilayer MoSe2 supports electrically reconfigurable single- and double-dot transport in the present device architecture.