Depth-Resolved Thermal Conductivity of HFCVD Diamond Films via Square-Pulsed Thermometry
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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866910128564862976 |
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| author | Zhang, Kexin Han, Xiaosong Yin, Ershuai Qian, Xin Wei, Junjun Jiang, Puqing |
| author_facet | Zhang, Kexin Han, Xiaosong Yin, Ershuai Qian, Xin Wei, Junjun Jiang, Puqing |
| contents | The integration of high-thermal-conductivity diamond films onto silicon carbide (SiC) substrates offers a promising pathway for thermal management in high-power electronic devices. Here, we investigate the depth-dependent thermal conductivity of a ~5 μm-thick diamond film grown on SiC by hot-filament chemical vapor deposition (HFCVD) using square-pulsed source (SPS) thermometry. Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) reveal pronounced grain coarsening from the nucleation interface to the film surface. By combining frequency-dependent thermal penetration with a depth-resolved thermal transport model, we quantitatively reconstruct the thermal conductivity profile. The thermal conductivity increases sharply from ~60 W m^(-1) K^(-1) near the nucleation region to ~200 W m^(-1) K^(-1) at the surface, directly reflecting the underlying microstructural evolution. These results provide a physically grounded understanding of graded heat transport in HFCVD diamond and offer practical guidance for engineering diamond-based thermal management layers for next-generation power devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_12522 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Depth-Resolved Thermal Conductivity of HFCVD Diamond Films via Square-Pulsed Thermometry Zhang, Kexin Han, Xiaosong Yin, Ershuai Qian, Xin Wei, Junjun Jiang, Puqing Materials Science Applied Physics The integration of high-thermal-conductivity diamond films onto silicon carbide (SiC) substrates offers a promising pathway for thermal management in high-power electronic devices. Here, we investigate the depth-dependent thermal conductivity of a ~5 μm-thick diamond film grown on SiC by hot-filament chemical vapor deposition (HFCVD) using square-pulsed source (SPS) thermometry. Electron backscatter diffraction (EBSD) and transmission electron microscopy (TEM) reveal pronounced grain coarsening from the nucleation interface to the film surface. By combining frequency-dependent thermal penetration with a depth-resolved thermal transport model, we quantitatively reconstruct the thermal conductivity profile. The thermal conductivity increases sharply from ~60 W m^(-1) K^(-1) near the nucleation region to ~200 W m^(-1) K^(-1) at the surface, directly reflecting the underlying microstructural evolution. These results provide a physically grounded understanding of graded heat transport in HFCVD diamond and offer practical guidance for engineering diamond-based thermal management layers for next-generation power devices. |
| title | Depth-Resolved Thermal Conductivity of HFCVD Diamond Films via Square-Pulsed Thermometry |
| topic | Materials Science Applied Physics |
| url | https://arxiv.org/abs/2604.12522 |