Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene

Fuente: arXiv
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Autori principali: Moghe, Aditi Raman, Lagarde, Delphine, Papadopoulos, Sotirios, Lorchat, Etienne, López, Luis E. Parra, Moczko, Loïc, Watanabe, Kenji, Taniguchi, Takashi, Romeo, Michelangelo, Mauguet, Maxime, Marie, Xavier, Gloppe, Arnaud, Robert, Cédric, Berciaud, Stéphane
Natura: Preprint
Pubblicazione: 2026
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author Moghe, Aditi Raman
Lagarde, Delphine
Papadopoulos, Sotirios
Lorchat, Etienne
López, Luis E. Parra
Moczko, Loïc
Watanabe, Kenji
Taniguchi, Takashi
Romeo, Michelangelo
Mauguet, Maxime
Marie, Xavier
Gloppe, Arnaud
Robert, Cédric
Berciaud, Stéphane
author_facet Moghe, Aditi Raman
Lagarde, Delphine
Papadopoulos, Sotirios
Lorchat, Etienne
López, Luis E. Parra
Moczko, Loïc
Watanabe, Kenji
Taniguchi, Takashi
Romeo, Michelangelo
Mauguet, Maxime
Marie, Xavier
Gloppe, Arnaud
Robert, Cédric
Berciaud, Stéphane
contents Van der Waals heterostructures made from atomically thin transition metal dichalcogenides (TMD) and graphene have emerged as a building block for optoelectronic devices. Such systems are also uniquely poised to investigate interfacial coupling as well as photoinduced charge and energy transfer in the 2D limit. Recent works have revealed efficient photoluminescence quenching and picosecond transfer in TMD/graphene heterostructures. However, key questions regarding the transfer mechanisms remain. Here, employing time-resolved photoluminescence spectroscopy with 1~ps resolution in MoSe$_2$ monolayer directly coupled to a few-layer ``staircase-like'' graphene flake, we consistently observe an exciton transfer time of $\approx 2.5~\mathrm{ps}$ at cryogenic temperature that is marginally affected by the number of graphene layers. Remarkably, exciton transfer vanishes in samples consisting in an MoSe$_2$ monolayer separated from graphene by a thin dielectric spacer of hexagonal boron nitride, as soon as the spacer thickness reaches 1~nm. These results suggest that charge tunnelling processes govern exciton dynamics. Other mechanisms mediated the dipolar interactions (Förster-type energy transfer) have no measurable impact on bright excitons (with near-zero center of mass momentum) but may accelerate the relaxation of finite momentum ``hot'' excitons, leading to larger photoluminescence quenching than anticipated based on the measurements of the photoluminescence decay rates. Our work provides important insights into charge and energy transfer in van der Waals materials with direct implications for energy harvesting and funneling.
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id arxiv_https___arxiv_org_abs_2604_13445
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
Moghe, Aditi Raman
Lagarde, Delphine
Papadopoulos, Sotirios
Lorchat, Etienne
López, Luis E. Parra
Moczko, Loïc
Watanabe, Kenji
Taniguchi, Takashi
Romeo, Michelangelo
Mauguet, Maxime
Marie, Xavier
Gloppe, Arnaud
Robert, Cédric
Berciaud, Stéphane
Mesoscale and Nanoscale Physics
Materials Science
Van der Waals heterostructures made from atomically thin transition metal dichalcogenides (TMD) and graphene have emerged as a building block for optoelectronic devices. Such systems are also uniquely poised to investigate interfacial coupling as well as photoinduced charge and energy transfer in the 2D limit. Recent works have revealed efficient photoluminescence quenching and picosecond transfer in TMD/graphene heterostructures. However, key questions regarding the transfer mechanisms remain. Here, employing time-resolved photoluminescence spectroscopy with 1~ps resolution in MoSe$_2$ monolayer directly coupled to a few-layer ``staircase-like'' graphene flake, we consistently observe an exciton transfer time of $\approx 2.5~\mathrm{ps}$ at cryogenic temperature that is marginally affected by the number of graphene layers. Remarkably, exciton transfer vanishes in samples consisting in an MoSe$_2$ monolayer separated from graphene by a thin dielectric spacer of hexagonal boron nitride, as soon as the spacer thickness reaches 1~nm. These results suggest that charge tunnelling processes govern exciton dynamics. Other mechanisms mediated the dipolar interactions (Förster-type energy transfer) have no measurable impact on bright excitons (with near-zero center of mass momentum) but may accelerate the relaxation of finite momentum ``hot'' excitons, leading to larger photoluminescence quenching than anticipated based on the measurements of the photoluminescence decay rates. Our work provides important insights into charge and energy transfer in van der Waals materials with direct implications for energy harvesting and funneling.
title Sub-nm range momentum-dependent exciton transfer from a 2D semiconductor to graphene
topic Mesoscale and Nanoscale Physics
Materials Science
url https://arxiv.org/abs/2604.13445