Germanium-tin (GeSn) avalanche photodiode with up to 2.7 micro cutoff wavelength for extended SWIR detection
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| Autores principales: | , , , , , , , , , , , , , |
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| Formato: | Preprint |
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2026
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| _version_ | 1866913033339535360 |
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| author | Thai, Quang Minh Kumar, Rajesh Rudie, Justin Wang, Xiaoxin Ali, Abdulla Said Grant, Perry C. Stanchu, Hryhorii Qiu, Yunsheng Akwabli, Steven Chang, Chun-Chieh Liu, Jifeng Li, Baohua Du, Wei Yu, Shui-Qing |
| author_facet | Thai, Quang Minh Kumar, Rajesh Rudie, Justin Wang, Xiaoxin Ali, Abdulla Said Grant, Perry C. Stanchu, Hryhorii Qiu, Yunsheng Akwabli, Steven Chang, Chun-Chieh Liu, Jifeng Li, Baohua Du, Wei Yu, Shui-Qing |
| contents | Separate absorption charge multiplication germanium tin on silicon avalanche photodiode offers a viable solution to achieve CMOS compatible, high sensitivity detection technology in SWIR or extended SWIR range, leveraging the excellent k-factor of Si as multiplication layer and SWIR or e-SWIR band absorption of GeSn. However, unlike well-established growth of GeSn on Si with thick Ge buffer in-between to reduce threading dislocation density due to lattice mismatch, GeSn on Si APD design requires relatively thin Ge buffer to limit electric field drop through the background p-doped buffer and efficiently transporting photocarrier from GeSn absorber to Si multiplication layer, therefore making growth of high Sn content APD for e-SWIR coverage very challenging. In this work, we experimentally demonstrate GeSn on Si APD up to 12.7 percent Sn, monolithically grown on Si substrate with 122-nm-thick Ge buffer in between, which is considerably thinner than widely used 700-900 nm thick Ge buffer. Stronger relaxation of GeSn absorber via thin Ge buffer favors Sn incorporation, leading to higher Sn content than the nominal target of 8 percent Sn. Device detection range is significantly improved compared to previous work - with cutoff wavelength increased up to 2.7 micro at 300 K, in parallel with high avalanche gain at 77 K up to 21 at 1.55 micro and up to 52 at 2 micro, and good responsivity in SWIR or e-SWIR range, up to 1.45 AW-1 at 1.55 micro and 0.66 AW-1 at 2 micro. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_13449 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Germanium-tin (GeSn) avalanche photodiode with up to 2.7 micro cutoff wavelength for extended SWIR detection Thai, Quang Minh Kumar, Rajesh Rudie, Justin Wang, Xiaoxin Ali, Abdulla Said Grant, Perry C. Stanchu, Hryhorii Qiu, Yunsheng Akwabli, Steven Chang, Chun-Chieh Liu, Jifeng Li, Baohua Du, Wei Yu, Shui-Qing Applied Physics Separate absorption charge multiplication germanium tin on silicon avalanche photodiode offers a viable solution to achieve CMOS compatible, high sensitivity detection technology in SWIR or extended SWIR range, leveraging the excellent k-factor of Si as multiplication layer and SWIR or e-SWIR band absorption of GeSn. However, unlike well-established growth of GeSn on Si with thick Ge buffer in-between to reduce threading dislocation density due to lattice mismatch, GeSn on Si APD design requires relatively thin Ge buffer to limit electric field drop through the background p-doped buffer and efficiently transporting photocarrier from GeSn absorber to Si multiplication layer, therefore making growth of high Sn content APD for e-SWIR coverage very challenging. In this work, we experimentally demonstrate GeSn on Si APD up to 12.7 percent Sn, monolithically grown on Si substrate with 122-nm-thick Ge buffer in between, which is considerably thinner than widely used 700-900 nm thick Ge buffer. Stronger relaxation of GeSn absorber via thin Ge buffer favors Sn incorporation, leading to higher Sn content than the nominal target of 8 percent Sn. Device detection range is significantly improved compared to previous work - with cutoff wavelength increased up to 2.7 micro at 300 K, in parallel with high avalanche gain at 77 K up to 21 at 1.55 micro and up to 52 at 2 micro, and good responsivity in SWIR or e-SWIR range, up to 1.45 AW-1 at 1.55 micro and 0.66 AW-1 at 2 micro. |
| title | Germanium-tin (GeSn) avalanche photodiode with up to 2.7 micro cutoff wavelength for extended SWIR detection |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2604.13449 |