Enregistré dans:
| Auteurs principaux: | , , , , , , , , , , , |
|---|---|
| Format: | Preprint |
| Publié: |
2026
|
| Sujets: | |
| Accès en ligne: | https://arxiv.org/abs/2604.14680 |
| Tags: |
Ajouter un tag
Pas de tags, Soyez le premier à ajouter un tag!
|
| _version_ | 1866911597593624576 |
|---|---|
| author | Nath, Shimul Kanti Nandi, Sanjoy Kumar Sun, Xiao Das, Sujan Kumar Gong, Bin Ekins-Daukes, Nicholas J. Mishra, Deepak Suryawanshi, Mahesh P. Rickard, William D. A. Yin, Songyan Nielsen, Michael P. Elliman, Robert G. |
| author_facet | Nath, Shimul Kanti Nandi, Sanjoy Kumar Sun, Xiao Das, Sujan Kumar Gong, Bin Ekins-Daukes, Nicholas J. Mishra, Deepak Suryawanshi, Mahesh P. Rickard, William D. A. Yin, Songyan Nielsen, Michael P. Elliman, Robert G. |
| contents | Electroforming of metal-oxide-metal memristors is generally attributed to the creation of oxygen-vacancy filaments within the oxide, with noble metal electrodes such as Pt and Au remaining chemically inert. Here, we demonstrate that electroforming and subsequent operation of Pt/NbOx/Nb2O5/Pt devices can induce an unexpected and highly correlated redistribution of both oxygen and platinum. Time-of-flight secondary ion mass spectrometry reveals a filamentary pathway characterized by micrometer-scale oxygen enrichment extending from the Nb2O5 layer through NbOx and deep into the Pt top electrode. Surprisingly, this is accompanied by the formation of a Pt-rich filament penetrating the oxide stack along the same filamentary path. Finite-element and lumped-element modelling show that current-controlled negative-differential-resistance operation produces localized Joule heating and high-frequency thermal cycling, which strongly enhances oxygen migration and enables thermally assisted Pt diffusion along vacancy-rich pathways. These findings reveal a previously unrecognized metal-ion transport mechanism in NbOx memristors and highlight the critical role of post-forming electrical dynamics in determining filament chemistry, stability, and device reliability. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_14680 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Anomalous Platinum and Oxygen Transport during Electroforming of NbOx Memristors Nath, Shimul Kanti Nandi, Sanjoy Kumar Sun, Xiao Das, Sujan Kumar Gong, Bin Ekins-Daukes, Nicholas J. Mishra, Deepak Suryawanshi, Mahesh P. Rickard, William D. A. Yin, Songyan Nielsen, Michael P. Elliman, Robert G. Materials Science Electroforming of metal-oxide-metal memristors is generally attributed to the creation of oxygen-vacancy filaments within the oxide, with noble metal electrodes such as Pt and Au remaining chemically inert. Here, we demonstrate that electroforming and subsequent operation of Pt/NbOx/Nb2O5/Pt devices can induce an unexpected and highly correlated redistribution of both oxygen and platinum. Time-of-flight secondary ion mass spectrometry reveals a filamentary pathway characterized by micrometer-scale oxygen enrichment extending from the Nb2O5 layer through NbOx and deep into the Pt top electrode. Surprisingly, this is accompanied by the formation of a Pt-rich filament penetrating the oxide stack along the same filamentary path. Finite-element and lumped-element modelling show that current-controlled negative-differential-resistance operation produces localized Joule heating and high-frequency thermal cycling, which strongly enhances oxygen migration and enables thermally assisted Pt diffusion along vacancy-rich pathways. These findings reveal a previously unrecognized metal-ion transport mechanism in NbOx memristors and highlight the critical role of post-forming electrical dynamics in determining filament chemistry, stability, and device reliability. |
| title | Anomalous Platinum and Oxygen Transport during Electroforming of NbOx Memristors |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.14680 |