Ortigoza, M. A., & Stolbov, S. (2026). Optimal spin-qubit hallmarks of sulfur-vacancy defects in 4H-SiC: Design from first principles.
Chicago Style (17th ed.) CitationOrtigoza, Marisol Alcántara, and Sergey Stolbov. Optimal Spin-qubit Hallmarks of Sulfur-vacancy Defects in 4H-SiC: Design from First Principles. 2026.
MLA (9th ed.) CitationOrtigoza, Marisol Alcántara, and Sergey Stolbov. Optimal Spin-qubit Hallmarks of Sulfur-vacancy Defects in 4H-SiC: Design from First Principles. 2026.
Warning: These citations may not always be 100% accurate.