Saved in:
| Main Authors: | Ortigoza, Marisol Alcántara, Stolbov, Sergey |
|---|---|
| Format: | Preprint |
| Published: |
2026
|
| Subjects: | |
| Online Access: | https://arxiv.org/abs/2604.15175 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
Spin Qubit Properties of the Boron-Vacancy/Carbon Defect in the Two-Dimensional Hexagonal Boron Nitride
by: Stolbov, Sergey, et al.
Published: (2025)
by: Stolbov, Sergey, et al.
Published: (2025)
Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
by: Younesi, Ali Tayefeh, et al.
Published: (2026)
by: Younesi, Ali Tayefeh, et al.
Published: (2026)
Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation
by: Tsunasaki, Mukai, et al.
Published: (2022)
by: Tsunasaki, Mukai, et al.
Published: (2022)
Effects of localized laser-induced heating in the photoluminescence of silicon-vacancy color centers in 4H-SiC
by: Misiara, Adolfo, et al.
Published: (2024)
by: Misiara, Adolfo, et al.
Published: (2024)
Stability and decoherence analysis of the silicon vacancy in 3C-SiC
by: Fazio, Tommaso, et al.
Published: (2022)
by: Fazio, Tommaso, et al.
Published: (2022)
Surface Structuring of Patterned 4H-SiC Surfaces Using a SiC/Si/SiC Sandwich Approach
by: Jousseaume, Yann, et al.
Published: (2024)
by: Jousseaume, Yann, et al.
Published: (2024)
Ultralong-term high-density data storage with atomic defects in SiC
by: Hollenbach, M., et al.
Published: (2023)
by: Hollenbach, M., et al.
Published: (2023)
Measurements of dislocations in 4H-SiC with rocking curve imaging
by: Khaliq, Ahmar, et al.
Published: (2024)
by: Khaliq, Ahmar, et al.
Published: (2024)
Host dependence of PL5 ensemble in 4H-SiC
by: Li, Jiajun, et al.
Published: (2025)
by: Li, Jiajun, et al.
Published: (2025)
TCAD Parameters for 4H-SiC: A Review
by: Burin, Jürgen, et al.
Published: (2024)
by: Burin, Jürgen, et al.
Published: (2024)
Molecular dynamics simulation study of mechanical properties of 3C-SiC with extended defects
by: Shmahlii, Serhii, et al.
Published: (2026)
by: Shmahlii, Serhii, et al.
Published: (2026)
Interface stability of beta-Ga2O3 (100) on oxidized Si- and C-terminated 3C-SiC (001) substrates: a first-principles investigation
by: Licciardi, Marica, et al.
Published: (2026)
by: Licciardi, Marica, et al.
Published: (2026)
Comparative study of divacancies in 3C-, 4H- and 6H-SiC
by: Shafizade, Danial, et al.
Published: (2025)
by: Shafizade, Danial, et al.
Published: (2025)
Polarity Effect on the Heteroepitaxial Growth of BxC on 4H-SiC by CVD
by: Cauwet, François, et al.
Published: (2024)
by: Cauwet, François, et al.
Published: (2024)
Epitaxially-stabilized growth of wüstite FeO on 4H-SiC
by: Kimbugwe, Faisal, et al.
Published: (2025)
by: Kimbugwe, Faisal, et al.
Published: (2025)
Effect of edge dislocations on structural and electric properties of 4H-SiC
by: Łażewski, Jan, et al.
Published: (2015)
by: Łażewski, Jan, et al.
Published: (2015)
The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission
by: Bulancea-Lindvall, Oscar, et al.
Published: (2023)
by: Bulancea-Lindvall, Oscar, et al.
Published: (2023)
Combining unsupervised and supervised learning in microscopy enables defect analysis of a full 4H-SiC wafer
by: Nguyen, Binh Duong, et al.
Published: (2024)
by: Nguyen, Binh Duong, et al.
Published: (2024)
Thermochromic Properties of 3C-, 6H- and 4H-SiC Polytypes up to 500$^\circ$C
by: Ferro, Gabriel, et al.
Published: (2024)
by: Ferro, Gabriel, et al.
Published: (2024)
Theoretical characterization of NV-like defects in 4H-SiC using ADAQ with the SCAN and r2SCAN meta-GGA functionals
by: Abbas, Ghulam, et al.
Published: (2025)
by: Abbas, Ghulam, et al.
Published: (2025)
Controlled Spalling of Single Crystal 4H-SiC Bulk Substrates
by: Horn, Connor P, et al.
Published: (2024)
by: Horn, Connor P, et al.
Published: (2024)
Oxygen-vacancy quantum spin defects in silicon carbide
by: Chen, Yu, et al.
Published: (2025)
by: Chen, Yu, et al.
Published: (2025)
Theory of the divacancy in 4H-SiC: Impact of Jahn-Teller effect on optical properties
by: Žalandauskas, Vytautas, et al.
Published: (2024)
by: Žalandauskas, Vytautas, et al.
Published: (2024)
Individual Characterization of Fast-Responding Trap States at the NO-Annealed SiO$_2$/4H-SiC Interface
by: Ono, Takahiro, et al.
Published: (2026)
by: Ono, Takahiro, et al.
Published: (2026)
SiC-TGAP: A machine learning interatomic potential for radiation damage simulations in 3C-SiC
by: Hamedani, Ali, et al.
Published: (2025)
by: Hamedani, Ali, et al.
Published: (2025)
Uniaxial stress tuning of interfacial thermal conductance in cubic BAs/4H-SiC heterostructures
by: Zhang, Lei, et al.
Published: (2025)
by: Zhang, Lei, et al.
Published: (2025)
Density functional theory calculations for investigation of atomic structures of 4H-SiC/SiO$_2$ interface after NO annealing
by: Komatsu, Naoki, et al.
Published: (2022)
by: Komatsu, Naoki, et al.
Published: (2022)
Temperature dependence of the AB-lines and Optical Properties of the Carbon-Antisite Vacancy Pair in 4H-SiC
by: Bulancea-Lindvall, Oscar, et al.
Published: (2024)
by: Bulancea-Lindvall, Oscar, et al.
Published: (2024)
Theory of optical spin polarization of axial divacancy and nitrogen-vacancy defects in 4H-SiC
by: Bian, Guodong, et al.
Published: (2024)
by: Bian, Guodong, et al.
Published: (2024)
Black brookite rich in oxygen vacancies as an active photocatalyst for CO2 conversion: experiments and first-principles calculations
by: Katai, Masae, et al.
Published: (2024)
by: Katai, Masae, et al.
Published: (2024)
Machine learning Hamiltonian enables scalable and accurate defect calculations: The case of oxygen vacancies in amorphous SiO$_2$
by: Dai, Zhenxing, et al.
Published: (2026)
by: Dai, Zhenxing, et al.
Published: (2026)
Spin-active chlorine-related centers in 4H-SiC with telecom-band emissions
by: Shafizadeh, Danial, et al.
Published: (2026)
by: Shafizadeh, Danial, et al.
Published: (2026)
Multiferroic kinks and spin-flop transition in Ni$_{2}$InSbO$_6$ from first principles
by: Ono, Ryota, et al.
Published: (2023)
by: Ono, Ryota, et al.
Published: (2023)
Epitaxial MgSnN2 on 4H-SiC (0001): An Earth-Abundant Nitride for Green Optoelectronics and Photovoltaics
by: Gogova, D., et al.
Published: (2026)
by: Gogova, D., et al.
Published: (2026)
Thermal transport in GaN/AlN HEMTs on 4H-SiC: Role of layer thickness and hetero-interfaces
by: Tran, Dat Q., et al.
Published: (2025)
by: Tran, Dat Q., et al.
Published: (2025)
Density functional theory study of effect of NO annealing on electronic structure and carrier-scattering property of 4H-SiC(0001)/SiO$_2$ interface
by: Funaki, Nahoto, et al.
Published: (2025)
by: Funaki, Nahoto, et al.
Published: (2025)
A first-principles investigation of the diffusivities of oxygen and oxygen defects in ThO$_2$
by: Singh, Maniesha, et al.
Published: (2025)
by: Singh, Maniesha, et al.
Published: (2025)
Measuring vacancy-type defect density in monolayer semiconductors
by: Radic, Aleksandar, et al.
Published: (2024)
by: Radic, Aleksandar, et al.
Published: (2024)
Towards predictive atomistic simulations of SiC crystal growth
by: Reichmann, Alexander, et al.
Published: (2025)
by: Reichmann, Alexander, et al.
Published: (2025)
Controlled fabrication of freestanding monolayer SiC by electron irradiation
by: Da, Yunli, et al.
Published: (2024)
by: Da, Yunli, et al.
Published: (2024)
Similar Items
-
Spin Qubit Properties of the Boron-Vacancy/Carbon Defect in the Two-Dimensional Hexagonal Boron Nitride
by: Stolbov, Sergey, et al.
Published: (2025) -
Unraveling the electronic structure of silicon vacancy centers in 4H-SiC
by: Younesi, Ali Tayefeh, et al.
Published: (2026) -
Theoretical investigation of vacancy related defects at 4H-SiC(000$\bar{1}$)/SiO$_2$ interface after wet oxidation
by: Tsunasaki, Mukai, et al.
Published: (2022) -
Effects of localized laser-induced heating in the photoluminescence of silicon-vacancy color centers in 4H-SiC
by: Misiara, Adolfo, et al.
Published: (2024) -
Stability and decoherence analysis of the silicon vacancy in 3C-SiC
by: Fazio, Tommaso, et al.
Published: (2022)