APA (7th ed.) Citation

Yang, H., Yang, Y., Liu, Y., Ding, T., Shen, Y., Huang, J., . . . Cao, B. (2026). Atomic-scale order enables high thermal boundary conductance at $β$-Ga$_2$O$_3$/4H-SiC interfaces.

Chicago Style (17th ed.) Citation

Yang, Hongao, et al. Atomic-scale Order Enables High Thermal Boundary Conductance at $β$-Ga$_2$O$_3$/4H-SiC Interfaces. 2026.

MLA (9th ed.) Citation

Yang, Hongao, et al. Atomic-scale Order Enables High Thermal Boundary Conductance at $β$-Ga$_2$O$_3$/4H-SiC Interfaces. 2026.