Device-area selection of memristive transport regimes in epitaxial $Hf_{0.5}Zr_{0.5}O_{2}$-based ferroelectric devices

Fuente: arXiv

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Bibliographic Details
Main Authors:	Presas, Priscila A. Tapia, Galarregui, Lautaro, Acevedo, Wilson Román, Aguirre, Myriam H., Santiso, José, Matzen, Sylvia, Noheda, Beatriz, Rubi, Diego
Format:	Preprint
Published:	2026
Subjects:	Materials Science
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2604.15486