Device-area selection of memristive transport regimes in epitaxial $Hf_{0.5}Zr_{0.5}O_{2}$-based ferroelectric devices
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arXiv
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| Autores principales: | , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| _version_ | 1866918451860209664 |
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| author | Presas, Priscila A. Tapia Galarregui, Lautaro Acevedo, Wilson Román Aguirre, Myriam H. Santiso, José Matzen, Sylvia Noheda, Beatriz Rubi, Diego |
| author_facet | Presas, Priscila A. Tapia Galarregui, Lautaro Acevedo, Wilson Román Aguirre, Myriam H. Santiso, José Matzen, Sylvia Noheda, Beatriz Rubi, Diego |
| contents | Ferroelectric memristive devices based on hafnia are promising systems for neuromorphic electronics, yet the interplay between polarization-modulated resistive changes and defect-mediated transport often leads to complex and debated switching mechanisms. Here, we investigate this competition in epitaxial Hf$_{0.5}$Zr$_{0.5}$O$_2$/La$_{0.67}$Sr$_{0.33}$MnO$_3$ heterostructures with Pt top electrodes by combining structural, ferroelectric, and memristive characterization with a statistical analysis across a broad range of device areas spanning three orders of magnitude. We identify two distinct memristive regimes with opposite resistance--voltage chiralities. Small devices exhibit a low-resistance state that scales inversely with area, consistent with area-distributed tunneling transport, while larger devices display an area-independent resistance indicative of localized conductive channels. A statistical nucleation model quantitatively captures this behavior and yields a crossover characteristic area $A^* \approx 10^3~μ\mathrm{m}^2$. This crossover also correlates with the onset of ferroelectric wake-up in larger devices, linking conductive-channel nucleation and oxygen-vacancy redistribution within a unified physical picture. These results establish lateral device size as a key parameter controlling the dominant transport mechanism in epitaxial hafnia-based devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_15486 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Device-area selection of memristive transport regimes in epitaxial $Hf_{0.5}Zr_{0.5}O_{2}$-based ferroelectric devices Presas, Priscila A. Tapia Galarregui, Lautaro Acevedo, Wilson Román Aguirre, Myriam H. Santiso, José Matzen, Sylvia Noheda, Beatriz Rubi, Diego Materials Science Ferroelectric memristive devices based on hafnia are promising systems for neuromorphic electronics, yet the interplay between polarization-modulated resistive changes and defect-mediated transport often leads to complex and debated switching mechanisms. Here, we investigate this competition in epitaxial Hf$_{0.5}$Zr$_{0.5}$O$_2$/La$_{0.67}$Sr$_{0.33}$MnO$_3$ heterostructures with Pt top electrodes by combining structural, ferroelectric, and memristive characterization with a statistical analysis across a broad range of device areas spanning three orders of magnitude. We identify two distinct memristive regimes with opposite resistance--voltage chiralities. Small devices exhibit a low-resistance state that scales inversely with area, consistent with area-distributed tunneling transport, while larger devices display an area-independent resistance indicative of localized conductive channels. A statistical nucleation model quantitatively captures this behavior and yields a crossover characteristic area $A^* \approx 10^3~μ\mathrm{m}^2$. This crossover also correlates with the onset of ferroelectric wake-up in larger devices, linking conductive-channel nucleation and oxygen-vacancy redistribution within a unified physical picture. These results establish lateral device size as a key parameter controlling the dominant transport mechanism in epitaxial hafnia-based devices. |
| title | Device-area selection of memristive transport regimes in epitaxial $Hf_{0.5}Zr_{0.5}O_{2}$-based ferroelectric devices |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.15486 |