Hole concentrations in doped gray α-Sn on InSb and CdTe measured with infrared ellipsometry
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arXiv
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2026
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| author | Love, Jaden R. Armenta, Carlos A. Moses, Atlantis K. Woolf, Haley B. Hrabovsky, Jan Zollner, Stefan Engel, Aaron N. Palmstrøm, Christopher J. |
| author_facet | Love, Jaden R. Armenta, Carlos A. Moses, Atlantis K. Woolf, Haley B. Hrabovsky, Jan Zollner, Stefan Engel, Aaron N. Palmstrøm, Christopher J. |
| contents | Gray tin (α-Sn) layers with 30 nm thickness were grown on InSb (001) substrates using molecular beam epitaxy. The surface preparation of the substrates was adjusted to achieve either n-type or p-type doping in the α-Sn layer. Fourier-transform infrared ellipsometry was used to find the temperature-dependent dielectric function of the α-Sn layers from 0.03 to 0.8 eV and from 10 to 300 K. Because of the inverted band structure of α-Sn, the spectra show a strong absorption peak at 0.45 eV due to transitions from the inverted {Γ_-^7} "electron" valence band to the {Γ_+^8} heavy hole valence band. Applying the Thomas-Reiche-Kuhn f-sum rule, the integrated oscillator strength of this peak was used to calculate the heavy hole concentration as a function of temperature. For a nearly intrinsic α-Sn layer, the heavy hole concentration agrees well with predictions based on degenerate Fermi-Dirac statistics. Deviations from the intrinsic α-Sn carrier concentrations are attributed to substrate surface preparation leading to the diffusion of donor or acceptor ions into the α-Sn layer causing n-type or p-type doping. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2604_15553 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Hole concentrations in doped gray α-Sn on InSb and CdTe measured with infrared ellipsometry Love, Jaden R. Armenta, Carlos A. Moses, Atlantis K. Woolf, Haley B. Hrabovsky, Jan Zollner, Stefan Engel, Aaron N. Palmstrøm, Christopher J. Materials Science Gray tin (α-Sn) layers with 30 nm thickness were grown on InSb (001) substrates using molecular beam epitaxy. The surface preparation of the substrates was adjusted to achieve either n-type or p-type doping in the α-Sn layer. Fourier-transform infrared ellipsometry was used to find the temperature-dependent dielectric function of the α-Sn layers from 0.03 to 0.8 eV and from 10 to 300 K. Because of the inverted band structure of α-Sn, the spectra show a strong absorption peak at 0.45 eV due to transitions from the inverted {Γ_-^7} "electron" valence band to the {Γ_+^8} heavy hole valence band. Applying the Thomas-Reiche-Kuhn f-sum rule, the integrated oscillator strength of this peak was used to calculate the heavy hole concentration as a function of temperature. For a nearly intrinsic α-Sn layer, the heavy hole concentration agrees well with predictions based on degenerate Fermi-Dirac statistics. Deviations from the intrinsic α-Sn carrier concentrations are attributed to substrate surface preparation leading to the diffusion of donor or acceptor ions into the α-Sn layer causing n-type or p-type doping. |
| title | Hole concentrations in doped gray α-Sn on InSb and CdTe measured with infrared ellipsometry |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.15553 |