Fully compensated and uncompensated ferrimagnetic ferrovalley semiconductors
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| Main Authors: | , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866910138564083712 |
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| author | Xie, Weifeng Wang, Libo Yue, Yunliang Xu, Xiong Xia, Huayan Wang, Hui |
| author_facet | Xie, Weifeng Wang, Libo Yue, Yunliang Xu, Xiong Xia, Huayan Wang, Hui |
| contents | Altermagnets (AMs) and fully compensated ferrimagnets (FC-FIMs) are emerging classes of magnetic materials that combine the advantages of antiferromagnets and ferromagnets. Here, we elucidate the mechanism behind the uniaxial strain-driven transformation from AM to FC-FIM and find that the accompanying non-relativistic valley polarization is positively correlated with the net magnetic moment between magnetic atoms in opposite spin sublattices. We then propose an uncompensated ferrimagnetic monolayer VCrSeTeO to achieve large intrinsic valley polarization. Spin-orbit coupling (SOC) is shown to further increase the valley polarization to over 400 meV under uniaxial strains and the reason is explained in terms of SOC perturbation theorem. Furthermore, we reveal a distinctive anomalous valley Hall effect in which the valley Hall voltage is reversed within the same valley in ferrimagnet VCrSeTeO. This work proposes a strategy for realizing giant valley polarization and provides theoretical guidance for the application of ferrimagnetic ferrovalley semiconductors derived from altermagnets in valleytronics. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_15640 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Fully compensated and uncompensated ferrimagnetic ferrovalley semiconductors Xie, Weifeng Wang, Libo Yue, Yunliang Xu, Xiong Xia, Huayan Wang, Hui Materials Science Altermagnets (AMs) and fully compensated ferrimagnets (FC-FIMs) are emerging classes of magnetic materials that combine the advantages of antiferromagnets and ferromagnets. Here, we elucidate the mechanism behind the uniaxial strain-driven transformation from AM to FC-FIM and find that the accompanying non-relativistic valley polarization is positively correlated with the net magnetic moment between magnetic atoms in opposite spin sublattices. We then propose an uncompensated ferrimagnetic monolayer VCrSeTeO to achieve large intrinsic valley polarization. Spin-orbit coupling (SOC) is shown to further increase the valley polarization to over 400 meV under uniaxial strains and the reason is explained in terms of SOC perturbation theorem. Furthermore, we reveal a distinctive anomalous valley Hall effect in which the valley Hall voltage is reversed within the same valley in ferrimagnet VCrSeTeO. This work proposes a strategy for realizing giant valley polarization and provides theoretical guidance for the application of ferrimagnetic ferrovalley semiconductors derived from altermagnets in valleytronics. |
| title | Fully compensated and uncompensated ferrimagnetic ferrovalley semiconductors |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.15640 |