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Hauptverfasser: Elhajhasan, Mahmoud, Trukhan, Elena, Dudde, Katharina, Würsch, Guillaume, Lierath, Jana, Rousseau, Ian, Butté, Raphaël, Grandjean, Nicolas, Protik, Nakib Haider, Romano, Giuseppe, Callsen, Gordon
Format: Preprint
Veröffentlicht: 2026
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Online-Zugang:https://arxiv.org/abs/2604.19203
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author Elhajhasan, Mahmoud
Trukhan, Elena
Dudde, Katharina
Würsch, Guillaume
Lierath, Jana
Rousseau, Ian
Butté, Raphaël
Grandjean, Nicolas
Protik, Nakib Haider
Romano, Giuseppe
Callsen, Gordon
author_facet Elhajhasan, Mahmoud
Trukhan, Elena
Dudde, Katharina
Würsch, Guillaume
Lierath, Jana
Rousseau, Ian
Butté, Raphaël
Grandjean, Nicolas
Protik, Nakib Haider
Romano, Giuseppe
Callsen, Gordon
contents Heating of semiconductor devices limits their performance and lifetime, which must be addressed by thermal management starting at the heat source. It is a common assumption that the heat source and the resulting heat spot locally coincide, if their size exceeds the mean free paths of the main heat carriers, the phonons. We show that this paradigm of heat locality breaks down on length scales spanning several micrometers. As a consequence, non-local heating occurs in contradiction to Fourier's law. Therefore, we heat laterally structured semiconductor membranes that feature a rising number of interfaces with a well-focussed laser and map-out lattice temperatures by Raman thermometry. Remarkably, the non-local heating can exceed the laser-induced local heating, which we attribute to ballistic phonon transport far above cryogenic temperatures.
format Preprint
id arxiv_https___arxiv_org_abs_2604_19203
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle When heat goes astray -- non-local heating in a semiconductor
Elhajhasan, Mahmoud
Trukhan, Elena
Dudde, Katharina
Würsch, Guillaume
Lierath, Jana
Rousseau, Ian
Butté, Raphaël
Grandjean, Nicolas
Protik, Nakib Haider
Romano, Giuseppe
Callsen, Gordon
Mesoscale and Nanoscale Physics
Optics
Heating of semiconductor devices limits their performance and lifetime, which must be addressed by thermal management starting at the heat source. It is a common assumption that the heat source and the resulting heat spot locally coincide, if their size exceeds the mean free paths of the main heat carriers, the phonons. We show that this paradigm of heat locality breaks down on length scales spanning several micrometers. As a consequence, non-local heating occurs in contradiction to Fourier's law. Therefore, we heat laterally structured semiconductor membranes that feature a rising number of interfaces with a well-focussed laser and map-out lattice temperatures by Raman thermometry. Remarkably, the non-local heating can exceed the laser-induced local heating, which we attribute to ballistic phonon transport far above cryogenic temperatures.
title When heat goes astray -- non-local heating in a semiconductor
topic Mesoscale and Nanoscale Physics
Optics
url https://arxiv.org/abs/2604.19203