Valley-Aware Optimal Control of Spin Shuttling Using Cryogenic Integrated Electronics

Fuente: arXiv
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Auteurs principaux: Romero, Pau Dietz, Chaabani, Nermine, Duipmans, Lammert, David, Alessandro, Motzoi, Felix, van Waasen, Stefan, Geck, Lotte
Format: Preprint
Publié: 2026
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author Romero, Pau Dietz
Chaabani, Nermine
Duipmans, Lammert
David, Alessandro
Motzoi, Felix
van Waasen, Stefan
Geck, Lotte
author_facet Romero, Pau Dietz
Chaabani, Nermine
Duipmans, Lammert
David, Alessandro
Motzoi, Felix
van Waasen, Stefan
Geck, Lotte
contents Electron shuttling is emerging as a key mechanism for enabling long-range coupling in scalable spin-qubit architectures. Bringing shuttling waveform generation into the cryostat can improve scalability, but imposes strict area and power constraints on the control electronics. Concurrently, shuttling in Si/SiGe is further limited by a spatially varying valley splitting that induces spin--valley mixing and degrades coherence. Here, we make three contributions that address these limitations jointly: (i) an end-to-end co-simulation framework that combines disorder-informed valley maps with transistor-level cryogenic circuit simulations including electronic noise; (ii) a fully integrated cryogenic shuttling-signal generator tailored to velocity modulation, enabling period-wise waveform shaping through discrete circuit settings stored in on-chip memory; and (iii) a noise-aware optimization procedure that tunes only these implementable circuit controls, using one of four discrete resistor settings per period, to generate high-fidelity shuttling sequences. Across simulated valley and noise realizations in our co-simulation framework, the optimized velocity-modulation waveforms improve transport performance, achieving an average shuttling fidelity of $99.99 \pm 0.007\%$ at $v_{\mathrm{avg}} = 20~\mathrm{m\,s^{-1}}$ over a distance of $10~μ\mathrm{m}$, while maintaining active analog power consumption in the tens of $μ\mathrm{W}$ during shuttling. This validates on-chip storage and replay of optimized control settings as a practical strategy to mitigate valley disorder in scalable shuttling architectures.
format Preprint
id arxiv_https___arxiv_org_abs_2604_20482
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Valley-Aware Optimal Control of Spin Shuttling Using Cryogenic Integrated Electronics
Romero, Pau Dietz
Chaabani, Nermine
Duipmans, Lammert
David, Alessandro
Motzoi, Felix
van Waasen, Stefan
Geck, Lotte
Quantum Physics
Mesoscale and Nanoscale Physics
Instrumentation and Detectors
Electron shuttling is emerging as a key mechanism for enabling long-range coupling in scalable spin-qubit architectures. Bringing shuttling waveform generation into the cryostat can improve scalability, but imposes strict area and power constraints on the control electronics. Concurrently, shuttling in Si/SiGe is further limited by a spatially varying valley splitting that induces spin--valley mixing and degrades coherence. Here, we make three contributions that address these limitations jointly: (i) an end-to-end co-simulation framework that combines disorder-informed valley maps with transistor-level cryogenic circuit simulations including electronic noise; (ii) a fully integrated cryogenic shuttling-signal generator tailored to velocity modulation, enabling period-wise waveform shaping through discrete circuit settings stored in on-chip memory; and (iii) a noise-aware optimization procedure that tunes only these implementable circuit controls, using one of four discrete resistor settings per period, to generate high-fidelity shuttling sequences. Across simulated valley and noise realizations in our co-simulation framework, the optimized velocity-modulation waveforms improve transport performance, achieving an average shuttling fidelity of $99.99 \pm 0.007\%$ at $v_{\mathrm{avg}} = 20~\mathrm{m\,s^{-1}}$ over a distance of $10~μ\mathrm{m}$, while maintaining active analog power consumption in the tens of $μ\mathrm{W}$ during shuttling. This validates on-chip storage and replay of optimized control settings as a practical strategy to mitigate valley disorder in scalable shuttling architectures.
title Valley-Aware Optimal Control of Spin Shuttling Using Cryogenic Integrated Electronics
topic Quantum Physics
Mesoscale and Nanoscale Physics
Instrumentation and Detectors
url https://arxiv.org/abs/2604.20482