Engineering Wake-Up-Free Ferroelectric Capacitors with Enhanced High-Temperature Reliability
Fuente:
arXiv
Saved in:
| Main Authors: | Afroze, Nashrah, Soliman, Salma, Kuo, Yu-Hsin, Kang, Sanghyun, Tian, Mengkun, Ravikumar, Priyankka, Padovani, Andrea, Khan, Asif |
|---|---|
| Format: | Preprint |
| Published: |
2026
|
| Subjects: | |
| Online Access: | |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
ALD-Derived WO3-x Leads to Nearly Wake-Up-Free Ferroelectric Hf0.5Zr0.5O2 at Elevated Temperatures
by: Afroze, Nashrah, et al.
Published: (2026)
by: Afroze, Nashrah, et al.
Published: (2026)
The First Switch Effect in Ferroelectric Field-Effect Transistors
by: Ravikumar, Priyankka, et al.
Published: (2026)
by: Ravikumar, Priyankka, et al.
Published: (2026)
Hf/Zr Superlattice-Based High-\k{appa} Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS
by: Song, Taeyoung, et al.
Published: (2025)
by: Song, Taeyoung, et al.
Published: (2025)
Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures
by: Prasanna Venkatesan, et al.
Published: (2026)
by: Prasanna Venkatesan, et al.
Published: (2026)
Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures (Adv. Electron. Mater. 8/2026)
by: Prasanna Venkatesan, et al.
Published: (2026)
by: Prasanna Venkatesan, et al.
Published: (2026)
Conditions for domain-free negative capacitance
by: Ravindran, Prasanna Venkatesan, et al.
Published: (2026)
by: Ravindran, Prasanna Venkatesan, et al.
Published: (2026)
ALD Oxidant as A Tuning Knob for Memory Window Expansion in Ferroelectric FETs for Vertical NAND Applications
by: Jeyakumar, Ranie, et al.
Published: (2026)
by: Jeyakumar, Ranie, et al.
Published: (2026)
A Dual-Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High-Speed Reservoir Computing
by: Wang, Yifan, et al.
Published: (2025)
by: Wang, Yifan, et al.
Published: (2025)
A Dual‐Memory Ferroelectric Transistor Emulating Synaptic Metaplasticity for High‐Speed Reservoir Computing
by: Yifan Wang, et al.
Published: (2026)
by: Yifan Wang, et al.
Published: (2026)
Reliability of Capacitive Read in Arrays of Ferroelectric Capacitors
by: Fehlings, Luca, et al.
Published: (2025)
by: Fehlings, Luca, et al.
Published: (2025)
Deep Sight of Temperature‐Dependent Wake‐Up Effect of Hf 0.5 Zr 0.5 O 2 Capacitors and Characterization
by: Zichong Zhang, et al.
Published: (2026)
by: Zichong Zhang, et al.
Published: (2026)
FeNOMS: Enhancing Open Modification Spectral Library Search with In-Storage Processing on Ferroelectric NAND (FeNAND) Flash
by: Pinge, Sumukh, et al.
Published: (2025)
by: Pinge, Sumukh, et al.
Published: (2025)
Universal Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures
by: Paasio, Ella, et al.
Published: (2024)
by: Paasio, Ella, et al.
Published: (2024)
Cryogenic Characterization of Ferroelectric Non-volatile Capacitors
by: Vadlamani, Madhav, et al.
Published: (2025)
by: Vadlamani, Madhav, et al.
Published: (2025)
Ferroelectricity‐Enhanced Photocatalysis: Mechanisms, Materials, and Engineering Strategies
by: Min Gyeong Choe, et al.
Published: (2026)
by: Min Gyeong Choe, et al.
Published: (2026)
Highly Reliable Polymer Dielectric Materials for High‐Temperature Energy Storage Capacitors
by: Wenjie Huang, et al.
Published: (2026)
by: Wenjie Huang, et al.
Published: (2026)
Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors
by: Sara Vecchi, et al.
Published: (2024)
by: Sara Vecchi, et al.
Published: (2024)
Enhancing Urban GNSS Positioning Reliability via Conservative Satellite Selection Using Unanimous Voting Across Multiple Machine Learning Classifiers
by: Kim, Sanghyun, et al.
Published: (2025)
by: Kim, Sanghyun, et al.
Published: (2025)
A Van der Waals Material Exhibiting Room Temperature Broken Inversion Symmetry with Ferroelectricity
by: Fabia F. Athena, et al.
Published: (2025)
by: Fabia F. Athena, et al.
Published: (2025)
Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next‐Generation High‐Density Storage Systems
by: Giuk Kim, et al.
Published: (2025)
by: Giuk Kim, et al.
Published: (2025)
Toward Design Rules for Multilayer Ferroelectric Energy Storage Capacitors – A Study Based on Lead‐Free and Relaxor‐Ferroelectric/Paraelectric Multilayer Devices
by: Minh D. Nguyen, et al.
Published: (2024)
by: Minh D. Nguyen, et al.
Published: (2024)
Wake Up to the Past: Using Memory to Model Fluid Wake Effects on Robots
by: Vendruscolo, Luca, et al.
Published: (2026)
by: Vendruscolo, Luca, et al.
Published: (2026)
Challenges in inclusion: Peer acceptance, rejection, belonging and bullying among SEND students in Chinese rural schools
by: Mengkun Li
Published: (2025)
by: Mengkun Li
Published: (2025)
New Insights of Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Properties Under Cryogenic Temperatures in Integrated Ferroelectric Capacitors
by: Flavien Berthaud, et al.
Published: (2025)
by: Flavien Berthaud, et al.
Published: (2025)
Significados Construídos acerca das Instituições Socioeducativas: Entre o Imaginado e o Vivido
by: Andréa Sandoval Padovani
Published: (2016)
by: Andréa Sandoval Padovani
Published: (2016)
A escola como caminho socioeducativo para adolescentes privados de liberdade
by: Andréa Sandoval Padovani
Published: (2013)
by: Andréa Sandoval Padovani
Published: (2013)
Vertical NAND in a Ferroelectric-driven Paradigm Shift
by: Kim, Giuk, et al.
Published: (2025)
by: Kim, Giuk, et al.
Published: (2025)
Reverse Designing Ferroelectric Capacitors with Machine Learning-based Compact Modeling
by: Ferrer, Diego, et al.
Published: (2025)
by: Ferrer, Diego, et al.
Published: (2025)
Leakage Suppression Across Temperature in Al1-xScxN Thin Film Ferroelectric Capacitors through Boron Incorporation
by: Yousefian, Pedram, et al.
Published: (2025)
by: Yousefian, Pedram, et al.
Published: (2025)
Waking Up Blind: Cold-Start Optimization of Supervision-Free Agentic Trajectories for Grounded Visual Perception
by: Bajpai, Ashutosh, et al.
Published: (2026)
by: Bajpai, Ashutosh, et al.
Published: (2026)
A Full Spectrum of 3D Ferroelectric Memory Architectures Shaped by Polarization Sensing
by: Duan, Jiahui, et al.
Published: (2025)
by: Duan, Jiahui, et al.
Published: (2025)
Tubercular Gingivitis: A Wake-Up Call for Periodontists
by: Dr Kamlesh singh, Dr. Grishmi Niswade, Dr Sunil k Bapure, Dr Ajay kumar
Published: (2026)
by: Dr Kamlesh singh, Dr. Grishmi Niswade, Dr Sunil k Bapure, Dr Ajay kumar
Published: (2026)
The Quantum Message Complexity of Distributed Wake-Up with Advice
by: Robinson, Peter, et al.
Published: (2026)
by: Robinson, Peter, et al.
Published: (2026)
Wake Up Safe in the USA & International Patient Safety
by: Rajeev S. Iyer, et al.
Published: (2024)
by: Rajeev S. Iyer, et al.
Published: (2024)
Bulk Ferroelectric Heterostructures for High Temperature Lead-Free Piezoelectrics
by: Li, Yizhe, et al.
Published: (2025)
by: Li, Yizhe, et al.
Published: (2025)
WakeLoc: An Ultra-Low Power, Accurate and Scalable On-Demand RTLS using Wake-Up Radios
by: Cortesi, Silvano, et al.
Published: (2025)
by: Cortesi, Silvano, et al.
Published: (2025)
Bisphenol Analog‐Induced Cytotoxicity: Unraveling Endoplasmic Reticulum (ER) Stress and Apoptotic Pathways
by: Rafia Afroze Rifa, et al.
Published: (2026)
by: Rafia Afroze Rifa, et al.
Published: (2026)
Enhancing Thrust in Flapping Airfoils Through Wake Interactions with Oscillating Cylinder
by: Khan, Amir, et al.
Published: (2024)
by: Khan, Amir, et al.
Published: (2024)
Heat Transfer Modeling in Enhanced Geothermal Energy: A Three-Temperature Approach for Solid, Injected, and Residing Fluids
by: Yang, Yi-Yung, et al.
Published: (2026)
by: Yang, Yi-Yung, et al.
Published: (2026)
Improved Wake-Up Time For Euclidean Freeze-Tag Problem
by: Alipour, Sharareh, et al.
Published: (2025)
by: Alipour, Sharareh, et al.
Published: (2025)
Similar Items
-
ALD-Derived WO3-x Leads to Nearly Wake-Up-Free Ferroelectric Hf0.5Zr0.5O2 at Elevated Temperatures
by: Afroze, Nashrah, et al.
Published: (2026) -
The First Switch Effect in Ferroelectric Field-Effect Transistors
by: Ravikumar, Priyankka, et al.
Published: (2026) -
Hf/Zr Superlattice-Based High-\k{appa} Gate Dielectrics with Dipole Layer Engineering for Advanced CMOS
by: Song, Taeyoung, et al.
Published: (2025) -
Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures
by: Prasanna Venkatesan, et al.
Published: (2026) -
Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures (Adv. Electron. Mater. 8/2026)
by: Prasanna Venkatesan, et al.
Published: (2026)