Anisotropic multiband magnetotransport in LaAg$_2$Ge$_2$ thin films
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| Main Authors: | , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866914499314843648 |
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| author | Ohno, Mizuki Dorrian, Reiley Show, Veronica Falson, Joseph |
| author_facet | Ohno, Mizuki Dorrian, Reiley Show, Veronica Falson, Joseph |
| contents | ThCr$_2$Si$_2$-type intermetallics are layered conductors in which crystallographic anisotropy and multiband electronic states often give rise to characteristic magnetotransport phenomena. Here, we report the molecular-beam epitaxy growth of LaAg$_2$Ge$_2$ thin films on MgO(001) and their magnetotransport properties. The Hall effect and magnetoresistance are captured by an effective two-carrier description with a high-mobility electron band, yielding a positive magnetoresistance of 22.5% at 9 T. Angle-dependent magnetoresistance exhibits a dominant twofold anisotropy and additional reproducible dip/peak features at characteristic tilt angles that are nearly independent of field and temperature. These results extend our understanding of the anisotropic electronic transport in thin-film germanides within the ThCr$_2$Si$_2$ family. |
| format | Preprint |
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arxiv_https___arxiv_org_abs_2604_20709 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Anisotropic multiband magnetotransport in LaAg$_2$Ge$_2$ thin films Ohno, Mizuki Dorrian, Reiley Show, Veronica Falson, Joseph Materials Science ThCr$_2$Si$_2$-type intermetallics are layered conductors in which crystallographic anisotropy and multiband electronic states often give rise to characteristic magnetotransport phenomena. Here, we report the molecular-beam epitaxy growth of LaAg$_2$Ge$_2$ thin films on MgO(001) and their magnetotransport properties. The Hall effect and magnetoresistance are captured by an effective two-carrier description with a high-mobility electron band, yielding a positive magnetoresistance of 22.5% at 9 T. Angle-dependent magnetoresistance exhibits a dominant twofold anisotropy and additional reproducible dip/peak features at characteristic tilt angles that are nearly independent of field and temperature. These results extend our understanding of the anisotropic electronic transport in thin-film germanides within the ThCr$_2$Si$_2$ family. |
| title | Anisotropic multiband magnetotransport in LaAg$_2$Ge$_2$ thin films |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.20709 |