Pressure-Tuned Competing Electronic States in Layered Tellurides
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arXiv
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| Natura: | Preprint |
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2026
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| _version_ | 1866908989112975360 |
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| author | Abdel-Hafiez, Mahmoud Lingannan, Govindaraj Chareev, D. A. Vasiliev, A. N. Abutaha, Anas Dogan, Kadir Can Yagmurcukardes, Mehmet Egilmez, Mehmet Sahin, Hasan El-Khatib, Sami |
| author_facet | Abdel-Hafiez, Mahmoud Lingannan, Govindaraj Chareev, D. A. Vasiliev, A. N. Abutaha, Anas Dogan, Kadir Can Yagmurcukardes, Mehmet Egilmez, Mehmet Sahin, Hasan El-Khatib, Sami |
| contents | Layered transition-metal dichalcogenides (TMDs) host competing electronic states that can be tuned by external perturbations, providing a platform to explore the interplay between disorder, electronic structure, and quantum transport. Here we investigate magnetotransport in bulk semiconducting 2H-MoTe2 under hydrostatic pressure. At ambient pressure, transport evolves from high-temperature metallic behavior into activated conduction and ultimately a strongly localized variable-range hopping regime, accompanied by a pronounced magnetotransport anomaly near 45 K and large, nonsaturating magnetoresistance extending up to an unprecedented field of 60 T in semiconducting 2H-MoTe2. Under compression to 15.6 GPa, the insulating state is rapidly suppressed and a low-resistivity regime emerges in which quantum interference dominates, exhibiting a crossover from weak antilocalization (WAL) to weak localization (WL) at low temperatures. A physically motivated phenomenological description captures the magnetoresistance across these regimes and yields a characteristic electronic length scale that remains comparable across the localized and quantum-interference regimes. First-principles calculations reveal a continuous pressure-driven collapse of the bandgap into a semimetallic electronic structure. These results establish a unified picture of pressure-tuned transport spanning hopping and quantum-coherent regimes. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_21336 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Pressure-Tuned Competing Electronic States in Layered Tellurides Abdel-Hafiez, Mahmoud Lingannan, Govindaraj Chareev, D. A. Vasiliev, A. N. Abutaha, Anas Dogan, Kadir Can Yagmurcukardes, Mehmet Egilmez, Mehmet Sahin, Hasan El-Khatib, Sami Strongly Correlated Electrons Layered transition-metal dichalcogenides (TMDs) host competing electronic states that can be tuned by external perturbations, providing a platform to explore the interplay between disorder, electronic structure, and quantum transport. Here we investigate magnetotransport in bulk semiconducting 2H-MoTe2 under hydrostatic pressure. At ambient pressure, transport evolves from high-temperature metallic behavior into activated conduction and ultimately a strongly localized variable-range hopping regime, accompanied by a pronounced magnetotransport anomaly near 45 K and large, nonsaturating magnetoresistance extending up to an unprecedented field of 60 T in semiconducting 2H-MoTe2. Under compression to 15.6 GPa, the insulating state is rapidly suppressed and a low-resistivity regime emerges in which quantum interference dominates, exhibiting a crossover from weak antilocalization (WAL) to weak localization (WL) at low temperatures. A physically motivated phenomenological description captures the magnetoresistance across these regimes and yields a characteristic electronic length scale that remains comparable across the localized and quantum-interference regimes. First-principles calculations reveal a continuous pressure-driven collapse of the bandgap into a semimetallic electronic structure. These results establish a unified picture of pressure-tuned transport spanning hopping and quantum-coherent regimes. |
| title | Pressure-Tuned Competing Electronic States in Layered Tellurides |
| topic | Strongly Correlated Electrons |
| url | https://arxiv.org/abs/2604.21336 |