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| Main Authors: | , , , , , , , , |
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| Format: | Preprint |
| Published: |
2026
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| Subjects: | |
| Online Access: | https://arxiv.org/abs/2604.22163 |
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| _version_ | 1866908990259068928 |
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| author | Bi, Hongjia Huang, Shaoqi Wu, Feiteng Guo, Jiarui Yang, Minhui Wu, Yunzhen Zhao, Mengze Liu, Kaihui Lin, Shisheng |
| author_facet | Bi, Hongjia Huang, Shaoqi Wu, Feiteng Guo, Jiarui Yang, Minhui Wu, Yunzhen Zhao, Mengze Liu, Kaihui Lin, Shisheng |
| contents | Diamond is an outstanding semiconductor for extreme electronics, yet reproducible n-type doping remains a long-standing challenge. Here we demonstrate stable n-type single-crystal diamond grown in a single step by a precisely controlled boron-hydrogen-phosphorus co-doping strategy. Hall measurements yield electron concentrations up to 1.0*1019 cm-3 with a resistivity as low as 0.249 ohmic.cm. Secondary-ion mass spectrometry shows that tri-elements doping is the key for achieving n-type conductivity as the electron density exceeds the incorporated phosphorus concentration and is the same level of that of hydrogen and boron concentrations, supporting a donor mechanism beyond an isolated substitutional phosphorus or just boron-hydrogen co-doping. Temperature-dependent photoluminescence (PL) reveals this tri-elements codoping method induces the impurity band, and the donor level is quite shallow around 61.6 meV, consistent with the temperature dependent resistance measurements. Moreover, the co-doped diamond also exhibits strong ultraviolet emission near 270-285 nm, and the internal quantum efficiency is estimated to be 69.4%, while the undoped diamond or only boron doped diamond shows negligible UV emission. These results establish a practical route to low-resistance high luminous n-type diamond and its based chips. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_22163 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | The boron-hydrogen-phosphorus tri-elements co-doped stable N-type single crystalline Diamond Bi, Hongjia Huang, Shaoqi Wu, Feiteng Guo, Jiarui Yang, Minhui Wu, Yunzhen Zhao, Mengze Liu, Kaihui Lin, Shisheng Applied Physics Diamond is an outstanding semiconductor for extreme electronics, yet reproducible n-type doping remains a long-standing challenge. Here we demonstrate stable n-type single-crystal diamond grown in a single step by a precisely controlled boron-hydrogen-phosphorus co-doping strategy. Hall measurements yield electron concentrations up to 1.0*1019 cm-3 with a resistivity as low as 0.249 ohmic.cm. Secondary-ion mass spectrometry shows that tri-elements doping is the key for achieving n-type conductivity as the electron density exceeds the incorporated phosphorus concentration and is the same level of that of hydrogen and boron concentrations, supporting a donor mechanism beyond an isolated substitutional phosphorus or just boron-hydrogen co-doping. Temperature-dependent photoluminescence (PL) reveals this tri-elements codoping method induces the impurity band, and the donor level is quite shallow around 61.6 meV, consistent with the temperature dependent resistance measurements. Moreover, the co-doped diamond also exhibits strong ultraviolet emission near 270-285 nm, and the internal quantum efficiency is estimated to be 69.4%, while the undoped diamond or only boron doped diamond shows negligible UV emission. These results establish a practical route to low-resistance high luminous n-type diamond and its based chips. |
| title | The boron-hydrogen-phosphorus tri-elements co-doped stable N-type single crystalline Diamond |
| topic | Applied Physics |
| url | https://arxiv.org/abs/2604.22163 |