Nature of point defects in bulk hexagonal diamond

Fuente: arXiv
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Main Authors: Zhu, Ling, Zhang, Xuanxuan, Alimu, Guliqinayi, Dai, Chen-Min, Ma, Chunlan, Cai, Zenghua
Format: Preprint
Published: 2026
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_version_ 1866914568595308544
author Zhu, Ling
Zhang, Xuanxuan
Alimu, Guliqinayi
Dai, Chen-Min
Ma, Chunlan
Cai, Zenghua
author_facet Zhu, Ling
Zhang, Xuanxuan
Alimu, Guliqinayi
Dai, Chen-Min
Ma, Chunlan
Cai, Zenghua
contents Hexagonal diamond (HD), an exotic carbon allotrope recently synthesized in bulk form, exhibits superior mechanical properties compared to cubic diamond (CD) and holds promise for advanced industrial and quantum applications. Using first-principles calcu-lations, we systematically investigate intrinsic defects, extrinsic dopants, and defect complexes in HD. Our study shows that VC dominates intrinsic conductivity, while Ci is unstable. Among extrinsic dopants, boron acts as a benign acceptor enhancing p-type conductivity, whereas nitrogen and phosphorus serve as effective donors for n-type conductivity. Group II and Group IV dopants, however, introduce high formation energies or neutral charge states with limited impact. Furthermore, VC, MgC and XV defect com-plexes display multiple spin and charge states within the HD band gap, highlighting their potential as color centers for hosting qubits. These results not only clarify the defect physics of HD but also demonstrate its broader implications for conductivity engineering and quantum technologies.
format Preprint
id arxiv_https___arxiv_org_abs_2604_22393
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Nature of point defects in bulk hexagonal diamond
Zhu, Ling
Zhang, Xuanxuan
Alimu, Guliqinayi
Dai, Chen-Min
Ma, Chunlan
Cai, Zenghua
Materials Science
Computational Physics
Hexagonal diamond (HD), an exotic carbon allotrope recently synthesized in bulk form, exhibits superior mechanical properties compared to cubic diamond (CD) and holds promise for advanced industrial and quantum applications. Using first-principles calcu-lations, we systematically investigate intrinsic defects, extrinsic dopants, and defect complexes in HD. Our study shows that VC dominates intrinsic conductivity, while Ci is unstable. Among extrinsic dopants, boron acts as a benign acceptor enhancing p-type conductivity, whereas nitrogen and phosphorus serve as effective donors for n-type conductivity. Group II and Group IV dopants, however, introduce high formation energies or neutral charge states with limited impact. Furthermore, VC, MgC and XV defect com-plexes display multiple spin and charge states within the HD band gap, highlighting their potential as color centers for hosting qubits. These results not only clarify the defect physics of HD but also demonstrate its broader implications for conductivity engineering and quantum technologies.
title Nature of point defects in bulk hexagonal diamond
topic Materials Science
Computational Physics
url https://arxiv.org/abs/2604.22393