The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers

Fuente: arXiv

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Bibliographic Details
Main Authors:	Leroch, Sabine, Stella, Robert, Hössinger, Andreas, Filipovic, Lado
Format:	Preprint
Published:	2026
Subjects:	Materials Science Computational Physics
Online Access:	Acceder al recurso
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Internet

https://arxiv.org/abs/2604.22434