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The influence of implantation conditions on dopant activation in Al-implanted 4H-SiC: A MD study applying an Al potential fitted to DFT barriers

Fuente: arXiv

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Détails bibliographiques
Auteurs principaux:	Leroch, Sabine, Stella, Robert, Hössinger, Andreas, Filipovic, Lado
Format:	Preprint
Publié:	2026
Sujets:	Materials Science Computational Physics
Accès en ligne:	Acceder al recurso
Tags:	Ajouter un tag Pas de tags, Soyez le premier à ajouter un tag!

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