Pulse Shaping to Mitigate the Impact of Device Imperfections in Field-Free Switching Using Combined Spin-Orbit and Spin-Transfer Torques
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arXiv
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| Autori principali: | , , , , , , |
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| Natura: | Preprint |
| Pubblicazione: |
2026
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| _version_ | 1866917532783345664 |
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| author | Ray, Kuldeep Vigier, Jérémie Martin, Sylvain Bouard, Chloé Lefoulon, Nicolas Drouard, Marc Gaudin, Gilles |
| author_facet | Ray, Kuldeep Vigier, Jérémie Martin, Sylvain Bouard, Chloé Lefoulon, Nicolas Drouard, Marc Gaudin, Gilles |
| contents | Combining spin-orbit (SOT) and spin-transfer torques (STT) provides a practical approach for field-free switching in spin-orbit torque magnetic random-access memory (SOT-MRAM), a prerequisite for industrial deployment, but can compromise reliability through phenomena such as backhopping, especially in top-pinned stacks commonly used for SOT-MRAM. We investigate the write error rate (WER) of combined SOT + STT switching in top-pinned devices that are not optimized for STT switching. Experiments reveal clear indications of STT-induced backhopping and a pronounced field-free SOT switching asymmetry between AP-to-P and P-to-AP transitions. Our macrospin model, using two coupled Landau Lifshitz Gilbert equations for the free and the reference layers, qualitatively reproduces this asymmetry and reveals an intermediate loss-of-determinism regime in addition to the well-known backhopping region. Based on these simulations, we propose mitigation strategies and experimentally demonstrate that STT pulse shaping reduces WER and improves switching robustness in the presence of device imperfections. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_22574 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Pulse Shaping to Mitigate the Impact of Device Imperfections in Field-Free Switching Using Combined Spin-Orbit and Spin-Transfer Torques Ray, Kuldeep Vigier, Jérémie Martin, Sylvain Bouard, Chloé Lefoulon, Nicolas Drouard, Marc Gaudin, Gilles Mesoscale and Nanoscale Physics Applied Physics Combining spin-orbit (SOT) and spin-transfer torques (STT) provides a practical approach for field-free switching in spin-orbit torque magnetic random-access memory (SOT-MRAM), a prerequisite for industrial deployment, but can compromise reliability through phenomena such as backhopping, especially in top-pinned stacks commonly used for SOT-MRAM. We investigate the write error rate (WER) of combined SOT + STT switching in top-pinned devices that are not optimized for STT switching. Experiments reveal clear indications of STT-induced backhopping and a pronounced field-free SOT switching asymmetry between AP-to-P and P-to-AP transitions. Our macrospin model, using two coupled Landau Lifshitz Gilbert equations for the free and the reference layers, qualitatively reproduces this asymmetry and reveals an intermediate loss-of-determinism regime in addition to the well-known backhopping region. Based on these simulations, we propose mitigation strategies and experimentally demonstrate that STT pulse shaping reduces WER and improves switching robustness in the presence of device imperfections. |
| title | Pulse Shaping to Mitigate the Impact of Device Imperfections in Field-Free Switching Using Combined Spin-Orbit and Spin-Transfer Torques |
| topic | Mesoscale and Nanoscale Physics Applied Physics |
| url | https://arxiv.org/abs/2604.22574 |