Spin Seebeck Effect in Normal-Metal--Chiral-Insulator Heterostructure

Fuente: arXiv
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Main Authors: Zhang, Jiayan, Li, Gaoyang, Tang, Gaomin, Xing, Yanxia
Format: Preprint
Published: 2026
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author Zhang, Jiayan
Li, Gaoyang
Tang, Gaomin
Xing, Yanxia
author_facet Zhang, Jiayan
Li, Gaoyang
Tang, Gaomin
Xing, Yanxia
contents Phonons can carry angular momentum and exhibit chirality through the circular polarization of atomic motion. This enables a phonon-mediated spin Seebeck effect (SSE) via the conversion of phonon angular momentum into electron spin angular momentum. In this Letter, we develop a theoretical framework for calculating the spin current in a normal-metal (NM)-chiral-insulator (CI) heterostructure within the nonequilibrium Green's function formalism. We discuss the influence of (i) the thermal bias across the NM-CI interface, (ii) the chemical potential of the NM, and (iii) the insertion of an additional interfacial layer, on the spin transport properties. We identify two remarkable nonlinear spin transport phenomena: negative differential SSE and spin-current rectification. The negative differential SSE arises from the competition between the thermal bias and the thermally excited electron density. The spin-current rectification suggests the possibility of realizing a thermally controlled spin diode. We also find that the spin transport behavior is closely associated with an effective interfacial spectral density. This work provides a novel route toward thermally controlled spintronic devices using chiral phonons.
format Preprint
id arxiv_https___arxiv_org_abs_2604_23111
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Spin Seebeck Effect in Normal-Metal--Chiral-Insulator Heterostructure
Zhang, Jiayan
Li, Gaoyang
Tang, Gaomin
Xing, Yanxia
Mesoscale and Nanoscale Physics
Phonons can carry angular momentum and exhibit chirality through the circular polarization of atomic motion. This enables a phonon-mediated spin Seebeck effect (SSE) via the conversion of phonon angular momentum into electron spin angular momentum. In this Letter, we develop a theoretical framework for calculating the spin current in a normal-metal (NM)-chiral-insulator (CI) heterostructure within the nonequilibrium Green's function formalism. We discuss the influence of (i) the thermal bias across the NM-CI interface, (ii) the chemical potential of the NM, and (iii) the insertion of an additional interfacial layer, on the spin transport properties. We identify two remarkable nonlinear spin transport phenomena: negative differential SSE and spin-current rectification. The negative differential SSE arises from the competition between the thermal bias and the thermally excited electron density. The spin-current rectification suggests the possibility of realizing a thermally controlled spin diode. We also find that the spin transport behavior is closely associated with an effective interfacial spectral density. This work provides a novel route toward thermally controlled spintronic devices using chiral phonons.
title Spin Seebeck Effect in Normal-Metal--Chiral-Insulator Heterostructure
topic Mesoscale and Nanoscale Physics
url https://arxiv.org/abs/2604.23111