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| Format: | Preprint |
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2026
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| Online-Zugang: | https://arxiv.org/abs/2604.24240 |
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| _version_ | 1866914510148730880 |
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| author | Lin, Baichen Chen, Shanquan Zhang, Yubo Si, Yangyang Huang, Haoliang Huo, Chuanrui Munnik, Frans Dong, Yongqi You, Lu Shao, Jian Ku, Yu-Chieh Quyen, Nguyen Nhat Keshri, Aryan Luo, Zhenlin Zhao, Weiwei Chang, Chun-Fu Luo, Chih-Wei Das, Sujit Deng, Shiqing Kuo, Chang-Yang Chen, Zuhuang |
| author_facet | Lin, Baichen Chen, Shanquan Zhang, Yubo Si, Yangyang Huang, Haoliang Huo, Chuanrui Munnik, Frans Dong, Yongqi You, Lu Shao, Jian Ku, Yu-Chieh Quyen, Nguyen Nhat Keshri, Aryan Luo, Zhenlin Zhao, Weiwei Chang, Chun-Fu Luo, Chih-Wei Das, Sujit Deng, Shiqing Kuo, Chang-Yang Chen, Zuhuang |
| contents | Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is often hindered by the coupling of MITs with symmetry-lowering structural phase transitions, which limits switching speed and endurance. In this study, we engineered an iso-symmetric MIT on average in epitaxial rutile VO2 thin films via an in-situ nitrogen doping strategy. Nitrogen incorporation effectively suppresses V-V dimerization, enabling an iso-symmetric MIT, while preserving the original crystal symmetry. Furthermore, in-operando time-resolved optical reflectivity measurements revealed a shortened switching time in nitrogen-doped films, highlighting their enhanced performance. Our findings provide critical insights into the underlying mechanisms of MITs and introduce anion doping as a powerful tool for tailoring phase transitions in strongly correlated electron systems. This approach opens new avenues for the development of high-performance electronic and photonic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_24240 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2 Lin, Baichen Chen, Shanquan Zhang, Yubo Si, Yangyang Huang, Haoliang Huo, Chuanrui Munnik, Frans Dong, Yongqi You, Lu Shao, Jian Ku, Yu-Chieh Quyen, Nguyen Nhat Keshri, Aryan Luo, Zhenlin Zhao, Weiwei Chang, Chun-Fu Luo, Chih-Wei Das, Sujit Deng, Shiqing Kuo, Chang-Yang Chen, Zuhuang Materials Science Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is often hindered by the coupling of MITs with symmetry-lowering structural phase transitions, which limits switching speed and endurance. In this study, we engineered an iso-symmetric MIT on average in epitaxial rutile VO2 thin films via an in-situ nitrogen doping strategy. Nitrogen incorporation effectively suppresses V-V dimerization, enabling an iso-symmetric MIT, while preserving the original crystal symmetry. Furthermore, in-operando time-resolved optical reflectivity measurements revealed a shortened switching time in nitrogen-doped films, highlighting their enhanced performance. Our findings provide critical insights into the underlying mechanisms of MITs and introduce anion doping as a powerful tool for tailoring phase transitions in strongly correlated electron systems. This approach opens new avenues for the development of high-performance electronic and photonic devices. |
| title | Nitrogen doping induced metal-insulator transition with iso-symmetric character in rutile VO2 |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.24240 |