Spectral tuning of single T centres by the Stark effect
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arXiv
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| Main Authors: | , , , , , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866917442727444480 |
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| author | Dobinson, Michael Hufnagel, Felix Meynell, Simon A. Bowness, Camille Gascoine, Melanie Wasserman, Walter Shandilya, Prasoon K. Dangel, Christian Thewalt, Michael L. W. Simmons, Stephanie Higginbottom, Daniel B. |
| author_facet | Dobinson, Michael Hufnagel, Felix Meynell, Simon A. Bowness, Camille Gascoine, Melanie Wasserman, Walter Shandilya, Prasoon K. Dangel, Christian Thewalt, Michael L. W. Simmons, Stephanie Higginbottom, Daniel B. |
| contents | Among the many solid-state emitters being explored for scalable quantum technologies, the silicon T centre is a leading candidate offering long-lived spin qubits, a telecommunications-band spin-photon interface, and integration with on-chip photonic circuits. However, nanophotonic integration broadens both the inhomogeneous spectral distribution and individual emitter linewidths. Here, we integrate single T centres into silicon nanophotonic cavities with p-i-n diodes for local electronic control. These devices enable Stark tuning up to 30 GHz, sufficient to bring 55(2)% of on-chip T centres into mutual resonance, and demonstrate tunable lifetime reduction across the cavity resonance. A model of the joint excitation probability shows an orders-of-magnitude increase in entanglement rate by tuning distinct emitters into mutual resonance. Luminescence modulation at high reverse biases reveals a transition to a dark charge state. Finally, bias-induced modulation of the optical transition splitting uncovers a potential mechanism for electrically driven excited-state spin mixing via spin-orbit coupling. Localized and individual spectral tuning increases the yield of performant silicon spin-photon interfaces and the number of devices per chip available for large-scale entanglement and quantum information technologies. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_25170 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Spectral tuning of single T centres by the Stark effect Dobinson, Michael Hufnagel, Felix Meynell, Simon A. Bowness, Camille Gascoine, Melanie Wasserman, Walter Shandilya, Prasoon K. Dangel, Christian Thewalt, Michael L. W. Simmons, Stephanie Higginbottom, Daniel B. Quantum Physics Among the many solid-state emitters being explored for scalable quantum technologies, the silicon T centre is a leading candidate offering long-lived spin qubits, a telecommunications-band spin-photon interface, and integration with on-chip photonic circuits. However, nanophotonic integration broadens both the inhomogeneous spectral distribution and individual emitter linewidths. Here, we integrate single T centres into silicon nanophotonic cavities with p-i-n diodes for local electronic control. These devices enable Stark tuning up to 30 GHz, sufficient to bring 55(2)% of on-chip T centres into mutual resonance, and demonstrate tunable lifetime reduction across the cavity resonance. A model of the joint excitation probability shows an orders-of-magnitude increase in entanglement rate by tuning distinct emitters into mutual resonance. Luminescence modulation at high reverse biases reveals a transition to a dark charge state. Finally, bias-induced modulation of the optical transition splitting uncovers a potential mechanism for electrically driven excited-state spin mixing via spin-orbit coupling. Localized and individual spectral tuning increases the yield of performant silicon spin-photon interfaces and the number of devices per chip available for large-scale entanglement and quantum information technologies. |
| title | Spectral tuning of single T centres by the Stark effect |
| topic | Quantum Physics |
| url | https://arxiv.org/abs/2604.25170 |