Proximity Ferroelectricity Driven by Mobile High-Miller-Index Domain Walls
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arXiv
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| Auteurs principaux: | , |
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| Format: | Preprint |
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2026
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| _version_ | 1866914513660411904 |
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| author | Ke, Changming Liu, Shi |
| author_facet | Ke, Changming Liu, Shi |
| contents | Wurtzite ferroelectrics such as scandium-doped aluminum nitride (AlScN) are promising for next-generation memory because of their compatibility with semiconductor processes and strong spontaneous polarization. Ferroelectric switching in these materials is typically attributed to doping-induced softening of the bulk switching barrier. However, recent reports of proximity ferroelectricity, in which undoped AlN layers up to 500 nm thick fully switch in AlN/AlScN multilayers, challenge this view. Here, we reveal an alternative switching mechanism mediated by high-Miller-index domain walls, long overlooked due to their complex geometry and presumed instability. Using first-principles calculations and machine-learning molecular dynamics simulations, we show that these walls, once nucleated, migrate with exceptionally low barriers. The Sc dopants play a dual role: they stabilize high-index walls and thereby promote nucleation, while also introducing pinning that hinders wall motion. In multilayers, our simulations demonstrate that mobile domain walls nucleated in AlScN can propagate deep into adjacent AlN, where they move easily without dopant pinning, enabling low-field switching across thick undoped layers. This microscopic divide-and-conquer mechanism resolves the puzzle of proximity ferroelectricity and highlights high-index interfaces as an underexplored lever for controlling ferroelectric switching. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_25343 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Proximity Ferroelectricity Driven by Mobile High-Miller-Index Domain Walls Ke, Changming Liu, Shi Materials Science Wurtzite ferroelectrics such as scandium-doped aluminum nitride (AlScN) are promising for next-generation memory because of their compatibility with semiconductor processes and strong spontaneous polarization. Ferroelectric switching in these materials is typically attributed to doping-induced softening of the bulk switching barrier. However, recent reports of proximity ferroelectricity, in which undoped AlN layers up to 500 nm thick fully switch in AlN/AlScN multilayers, challenge this view. Here, we reveal an alternative switching mechanism mediated by high-Miller-index domain walls, long overlooked due to their complex geometry and presumed instability. Using first-principles calculations and machine-learning molecular dynamics simulations, we show that these walls, once nucleated, migrate with exceptionally low barriers. The Sc dopants play a dual role: they stabilize high-index walls and thereby promote nucleation, while also introducing pinning that hinders wall motion. In multilayers, our simulations demonstrate that mobile domain walls nucleated in AlScN can propagate deep into adjacent AlN, where they move easily without dopant pinning, enabling low-field switching across thick undoped layers. This microscopic divide-and-conquer mechanism resolves the puzzle of proximity ferroelectricity and highlights high-index interfaces as an underexplored lever for controlling ferroelectric switching. |
| title | Proximity Ferroelectricity Driven by Mobile High-Miller-Index Domain Walls |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.25343 |