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| Main Authors: | , , , |
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| Format: | Preprint |
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2026
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| Online Access: | https://arxiv.org/abs/2604.25621 |
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| _version_ | 1866914514367152128 |
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| author | Dai, Zhenxing Huang, Menglin Gong, Xin-Gao Chen, Shiyou |
| author_facet | Dai, Zhenxing Huang, Menglin Gong, Xin-Gao Chen, Shiyou |
| contents | Platinum (Pt) is widely used for carrier-lifetime control in silicon power devices, yet the microscopic nonradiative recombination mechanism of the substitutional platinum ($\text{Pt}_\text{Si}$) dopant remains debated. Using first-principles calculations combined with nonradiative multiphonon theory, we systematically investigate the electronic structures and carrier capture dynamics of $\text{Pt}_\text{Si}$. Our results show that both the donor ($+/0$) and acceptor ($0/-$) levels of $\text{Pt}_\text{Si}$ exhibit large capture cross sections for electron and hole carriers, thereby making $\text{Pt}_\text{Si}$ an effective recombination center. Notably, the calculated capture cross sections are sensitive to the symmetry-equivalent defect configurations with different Jahn-Teller distortions. By accounting for two different $D_{2d}$ configurations of neutral $\text{Pt}_\text{Si}$ during transitions properly, our calculated carrier capture cross sections align well with experimental values. This work provides a microscopic picture of the carrier capture processes induced by $\text{Pt}_\text{Si}$ and emphasizes the importance of symmetry-equivalent configurations in defect-assisted nonradiative recombination. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_25621 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Substitutional platinum as an efficient nonradiative recombination center in silicon Dai, Zhenxing Huang, Menglin Gong, Xin-Gao Chen, Shiyou Materials Science Platinum (Pt) is widely used for carrier-lifetime control in silicon power devices, yet the microscopic nonradiative recombination mechanism of the substitutional platinum ($\text{Pt}_\text{Si}$) dopant remains debated. Using first-principles calculations combined with nonradiative multiphonon theory, we systematically investigate the electronic structures and carrier capture dynamics of $\text{Pt}_\text{Si}$. Our results show that both the donor ($+/0$) and acceptor ($0/-$) levels of $\text{Pt}_\text{Si}$ exhibit large capture cross sections for electron and hole carriers, thereby making $\text{Pt}_\text{Si}$ an effective recombination center. Notably, the calculated capture cross sections are sensitive to the symmetry-equivalent defect configurations with different Jahn-Teller distortions. By accounting for two different $D_{2d}$ configurations of neutral $\text{Pt}_\text{Si}$ during transitions properly, our calculated carrier capture cross sections align well with experimental values. This work provides a microscopic picture of the carrier capture processes induced by $\text{Pt}_\text{Si}$ and emphasizes the importance of symmetry-equivalent configurations in defect-assisted nonradiative recombination. |
| title | Substitutional platinum as an efficient nonradiative recombination center in silicon |
| topic | Materials Science |
| url | https://arxiv.org/abs/2604.25621 |