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| Autori principali: | , , , |
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| Natura: | Preprint |
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2026
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| Accesso online: | https://arxiv.org/abs/2604.25658 |
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| _version_ | 1866913069297303552 |
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| author | Ma, Wei Ma, Dengpan Lv, Zhiheng Liu, Zhifeng |
| author_facet | Ma, Wei Ma, Dengpan Lv, Zhiheng Liu, Zhifeng |
| contents | Electrical control of spin and magnetic sublattice degrees of freedom is essential for multifunctional and low-power spintronic devices. Bipolar altermagnetic semiconductors (BAMSs)-characterized by opposite spin polarizations at the valence and conduction band edges-offer such control, yet known systems require external strain and sizable valley polarization for gate-tunable switching. Here, we propose a universal spin-axis-layer locking (SALL) paradigm to overcome these limitations. By stacking two quasi-1D ferromagnetic monolayers with a 90 degrees twist, the bilayer reconstructs altermagnetic symmetry, yielding an intrinsic BAMS state where carrier spin is locked to specific layers and transport directions. Using synthesized CuBr2 monolayers as proof-of-concept, we demonstrate via first-principles calculations a robust BAMS state. Electrostatic gating enables simultaneous, reversible switching of carrier type, spin, and active layer, generating fully spin-polarized axial charge currents and directionally controllable pure spin currents with near-unity charge-to-spin conversion efficiency. This SALL model establishes a versatile, strain-independent strategy for advanced all-electrical altermagnetic devices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_25658 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Spin-Axis-Layer Locking for Intrinsic Bipolar Altermagnetic Semiconductors: Proof-of-Concept in Bilayer CuBr2 Ma, Wei Ma, Dengpan Lv, Zhiheng Liu, Zhifeng Materials Science Computational Physics Electrical control of spin and magnetic sublattice degrees of freedom is essential for multifunctional and low-power spintronic devices. Bipolar altermagnetic semiconductors (BAMSs)-characterized by opposite spin polarizations at the valence and conduction band edges-offer such control, yet known systems require external strain and sizable valley polarization for gate-tunable switching. Here, we propose a universal spin-axis-layer locking (SALL) paradigm to overcome these limitations. By stacking two quasi-1D ferromagnetic monolayers with a 90 degrees twist, the bilayer reconstructs altermagnetic symmetry, yielding an intrinsic BAMS state where carrier spin is locked to specific layers and transport directions. Using synthesized CuBr2 monolayers as proof-of-concept, we demonstrate via first-principles calculations a robust BAMS state. Electrostatic gating enables simultaneous, reversible switching of carrier type, spin, and active layer, generating fully spin-polarized axial charge currents and directionally controllable pure spin currents with near-unity charge-to-spin conversion efficiency. This SALL model establishes a versatile, strain-independent strategy for advanced all-electrical altermagnetic devices. |
| title | Spin-Axis-Layer Locking for Intrinsic Bipolar Altermagnetic Semiconductors: Proof-of-Concept in Bilayer CuBr2 |
| topic | Materials Science Computational Physics |
| url | https://arxiv.org/abs/2604.25658 |