Achieving Large Uniaxial and Homogeneous Strain in Two-Dimensional Materials
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arXiv
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| Auteurs principaux: | , , , , , , |
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| Format: | Preprint |
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2026
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| _version_ | 1866918472888352768 |
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| author | He, Yangchen Kienbaum, Jessica Fang, Wuzhang Ma, Hongrui Wang, Ying Yuan, Ping Rhodes, Daniel A. |
| author_facet | He, Yangchen Kienbaum, Jessica Fang, Wuzhang Ma, Hongrui Wang, Ying Yuan, Ping Rhodes, Daniel A. |
| contents | Strain engineering is a powerful tool for tuning the electronic, magnetic, and topological properties of two-dimensional (2D) materials and thin films - particularly at high values of strain (>3%) where many electronic, magnetic, and structural transitions have been predicted. However, most approaches to tuning strain in 2D materials are limited below 1.5%, with poor repeatability when cycling strain and low strain transfer when cooling to cryogenic temperatures. Here, we report a high-yield sample preparation and device strain platform that overcomes these limitations, enabling precise, reversible strain tuning up to the intrinsic strain-to-failure of the materials tested herein. In addition, we show that this platform can be used to controllably design uniform linear strain gradients across of 10's of $μ$m, providing a novel route to systematically investigate flexoelectric and flexomagnetic phenomena. Using CrSBr as a model system, we demonstrate uniform uniaxial strain, up to ~4%, with negligible slippage and linear strain gradients of up to 0.06%/$μ$m. We further show that our strain approach is applicable to a broad class of 2D materials, validating its performance for three different phases of transition metal dichalcogenides: 2H-MoTe$_2$, 1T$^\prime$-MoTe$_2$ and T$_\mathrm{d}$-WTe$_2$. In T$_\mathrm{d}$-WTe$_2$, verified by theoretical calculations, we show a continuous redshift of the A$_1^3$ mode, up to a record-breaking ~5.5% strain, with a clear separation of the A$_1^3$ and A$_1^2$ modes starting at 2% strain. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_26164 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Achieving Large Uniaxial and Homogeneous Strain in Two-Dimensional Materials He, Yangchen Kienbaum, Jessica Fang, Wuzhang Ma, Hongrui Wang, Ying Yuan, Ping Rhodes, Daniel A. Materials Science Mesoscale and Nanoscale Physics Strain engineering is a powerful tool for tuning the electronic, magnetic, and topological properties of two-dimensional (2D) materials and thin films - particularly at high values of strain (>3%) where many electronic, magnetic, and structural transitions have been predicted. However, most approaches to tuning strain in 2D materials are limited below 1.5%, with poor repeatability when cycling strain and low strain transfer when cooling to cryogenic temperatures. Here, we report a high-yield sample preparation and device strain platform that overcomes these limitations, enabling precise, reversible strain tuning up to the intrinsic strain-to-failure of the materials tested herein. In addition, we show that this platform can be used to controllably design uniform linear strain gradients across of 10's of $μ$m, providing a novel route to systematically investigate flexoelectric and flexomagnetic phenomena. Using CrSBr as a model system, we demonstrate uniform uniaxial strain, up to ~4%, with negligible slippage and linear strain gradients of up to 0.06%/$μ$m. We further show that our strain approach is applicable to a broad class of 2D materials, validating its performance for three different phases of transition metal dichalcogenides: 2H-MoTe$_2$, 1T$^\prime$-MoTe$_2$ and T$_\mathrm{d}$-WTe$_2$. In T$_\mathrm{d}$-WTe$_2$, verified by theoretical calculations, we show a continuous redshift of the A$_1^3$ mode, up to a record-breaking ~5.5% strain, with a clear separation of the A$_1^3$ and A$_1^2$ modes starting at 2% strain. |
| title | Achieving Large Uniaxial and Homogeneous Strain in Two-Dimensional Materials |
| topic | Materials Science Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2604.26164 |