Negative magnetoresistance in strained $α$-Sn and $α$-SnGe films in an in-plane magnetic field

Fuente: arXiv
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Auteurs principaux: Phan, Sunny, Kogan, Andrei, Thompson, Jesse, Johnson, Trent, Khaetskii, Alexander, Kiefer, Arnold
Format: Preprint
Publié: 2026
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author Phan, Sunny
Kogan, Andrei
Thompson, Jesse
Johnson, Trent
Khaetskii, Alexander
Kiefer, Arnold
author_facet Phan, Sunny
Kogan, Andrei
Thompson, Jesse
Johnson, Trent
Khaetskii, Alexander
Kiefer, Arnold
contents To test the hypothesis that the chiral anomaly is responsible for negative magnetoresitance (MR) in \atn{}, we have studied magnetotransport in strained, epitaxial films of pure \aSn{} and the alloy \aSnGe{} that are in the Dirac semimetal and 3D topological insulator state, respectively. We have observed for both states a negative MR with current either parallel or transverse to the in-plane magnetic field, but with a different dependence of MR on $\vec{B}$ strength. Our results are inconsistent with the chiral anomaly and suggest that other mechanisms may be responsible for negative MR in the Dirac/Weyl semimetal phase of \aSn{}. We also discuss several factors in sample design and material quality that may be contributing to the incongruous observations of MR reported in studies of strained \atn{} films.
format Preprint
id arxiv_https___arxiv_org_abs_2604_26168
institution arXiv
publishDate 2026
record_format arxiv
spellingShingle Negative magnetoresistance in strained $α$-Sn and $α$-SnGe films in an in-plane magnetic field
Phan, Sunny
Kogan, Andrei
Thompson, Jesse
Johnson, Trent
Khaetskii, Alexander
Kiefer, Arnold
Materials Science
To test the hypothesis that the chiral anomaly is responsible for negative magnetoresitance (MR) in \atn{}, we have studied magnetotransport in strained, epitaxial films of pure \aSn{} and the alloy \aSnGe{} that are in the Dirac semimetal and 3D topological insulator state, respectively. We have observed for both states a negative MR with current either parallel or transverse to the in-plane magnetic field, but with a different dependence of MR on $\vec{B}$ strength. Our results are inconsistent with the chiral anomaly and suggest that other mechanisms may be responsible for negative MR in the Dirac/Weyl semimetal phase of \aSn{}. We also discuss several factors in sample design and material quality that may be contributing to the incongruous observations of MR reported in studies of strained \atn{} films.
title Negative magnetoresistance in strained $α$-Sn and $α$-SnGe films in an in-plane magnetic field
topic Materials Science
url https://arxiv.org/abs/2604.26168