Strain and Twist Engineering of Interfacial Thermal Transport in Homo- and Hetero-Interfaces of Graphene and Hexagonal Boron Nitride
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arXiv
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| Autores principales: | , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| _version_ | 1866917445561745408 |
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| author | Jiang, Wenwu Qin, Huasong Liu, Yilun Ouyang, Wengen Hod, Oded Urbakh, Michael |
| author_facet | Jiang, Wenwu Qin, Huasong Liu, Yilun Ouyang, Wengen Hod, Oded Urbakh, Michael |
| contents | A dramatic difference between the vertical thermal conductance response of homogeneous and heterogeneous graphene/h-BN interfaces to external mechanical perturbations, is predicted. Homogeneous graphene and h-BN interfaces exhibit strong conductance reduction for both in-plane strain and interfacial twist. Conversely, the vertical thermal conductance of the heterogeneous graphene/h-BN junction is insensitive to twist deformations but shows significant increase or decrease under compressive or tensile strains, respectively. Our atomistic simulations predictions are rationalized by Fermi's golden rule and density of phonon modes analyses, indicating that vertical phonons and local stacking configurations have a central role in the interlayer heat transport behavior. A simple phenomenological model, based on local interlayer distance and stacking, captures well the dependence of vertical heat conductance on strain and twist deformations. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_26300 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Strain and Twist Engineering of Interfacial Thermal Transport in Homo- and Hetero-Interfaces of Graphene and Hexagonal Boron Nitride Jiang, Wenwu Qin, Huasong Liu, Yilun Ouyang, Wengen Hod, Oded Urbakh, Michael Mesoscale and Nanoscale Physics Materials Science A dramatic difference between the vertical thermal conductance response of homogeneous and heterogeneous graphene/h-BN interfaces to external mechanical perturbations, is predicted. Homogeneous graphene and h-BN interfaces exhibit strong conductance reduction for both in-plane strain and interfacial twist. Conversely, the vertical thermal conductance of the heterogeneous graphene/h-BN junction is insensitive to twist deformations but shows significant increase or decrease under compressive or tensile strains, respectively. Our atomistic simulations predictions are rationalized by Fermi's golden rule and density of phonon modes analyses, indicating that vertical phonons and local stacking configurations have a central role in the interlayer heat transport behavior. A simple phenomenological model, based on local interlayer distance and stacking, captures well the dependence of vertical heat conductance on strain and twist deformations. |
| title | Strain and Twist Engineering of Interfacial Thermal Transport in Homo- and Hetero-Interfaces of Graphene and Hexagonal Boron Nitride |
| topic | Mesoscale and Nanoscale Physics Materials Science |
| url | https://arxiv.org/abs/2604.26300 |