Tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moiré superlattices
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arXiv
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| Autores principales: | , , , , , , , , , , , , , , , , , , , |
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| Formato: | Preprint |
| Publicado: |
2026
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| author | Zheng, Chuanqi Li, Chushan Huang, Ke Zhang, Chenyu Watanabe, Kenji Taniguchi, Takashi Yang, Hao Guan, Dandan Liu, Liang Wang, Shiyong Li, Yaoyi Zheng, Hao Liu, Canhua Jia, Jinfeng Song, Xueyang Shi, Zhiwen Chen, Guorui Li, Xiao Li, Tingxin Liu, Xiaoxue |
| author_facet | Zheng, Chuanqi Li, Chushan Huang, Ke Zhang, Chenyu Watanabe, Kenji Taniguchi, Takashi Yang, Hao Guan, Dandan Liu, Liang Wang, Shiyong Li, Yaoyi Zheng, Hao Liu, Canhua Jia, Jinfeng Song, Xueyang Shi, Zhiwen Chen, Guorui Li, Xiao Li, Tingxin Liu, Xiaoxue |
| contents | Moiré superlattices based on rhombohedral multilayer graphene have emerged as a highly tunable platform for engineering correlated topological phases. Here, we systematically investigate the transport properties of the hole-doped side in rhombohedral tetralayer graphene/ hexagonal boron nitride (hBN) moiré superlattices across a range of twist angles and alignment orientations. Notably, we observed multiple high-Chern-number Chern insulators, including the previously reported integer Chern insulator with Chern number C = -4 at moiré filling factor v = -1 and newly discovered symmetry-broken Chern insulating states with C = +3, $\pm$2, $\pm$1 at fractional moiré fillings of v = -2.5 or -2.6. These Chern insulating states emerge in both hBN alignment, but exhibit a sensitive moiré wavelength dependence. Our findings demonstrate the exceptional tunability of these high-Chern-number states via moiré wavelength, displacement electric field and external magnetic field, underscoring the distinct topological landscape realized in hole-doped RTG/hBN moiré superlattices. |
| format | Preprint |
| id |
arxiv_https___arxiv_org_abs_2604_26643 |
| institution | arXiv |
| publishDate | 2026 |
| record_format | arxiv |
| spellingShingle | Tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moiré superlattices Zheng, Chuanqi Li, Chushan Huang, Ke Zhang, Chenyu Watanabe, Kenji Taniguchi, Takashi Yang, Hao Guan, Dandan Liu, Liang Wang, Shiyong Li, Yaoyi Zheng, Hao Liu, Canhua Jia, Jinfeng Song, Xueyang Shi, Zhiwen Chen, Guorui Li, Xiao Li, Tingxin Liu, Xiaoxue Mesoscale and Nanoscale Physics Moiré superlattices based on rhombohedral multilayer graphene have emerged as a highly tunable platform for engineering correlated topological phases. Here, we systematically investigate the transport properties of the hole-doped side in rhombohedral tetralayer graphene/ hexagonal boron nitride (hBN) moiré superlattices across a range of twist angles and alignment orientations. Notably, we observed multiple high-Chern-number Chern insulators, including the previously reported integer Chern insulator with Chern number C = -4 at moiré filling factor v = -1 and newly discovered symmetry-broken Chern insulating states with C = +3, $\pm$2, $\pm$1 at fractional moiré fillings of v = -2.5 or -2.6. These Chern insulating states emerge in both hBN alignment, but exhibit a sensitive moiré wavelength dependence. Our findings demonstrate the exceptional tunability of these high-Chern-number states via moiré wavelength, displacement electric field and external magnetic field, underscoring the distinct topological landscape realized in hole-doped RTG/hBN moiré superlattices. |
| title | Tunable high-Chern-number Chern insulators in rhombohedral tetralayer graphene/hBN moiré superlattices |
| topic | Mesoscale and Nanoscale Physics |
| url | https://arxiv.org/abs/2604.26643 |